IRFH5300TRPBF vs IRFH5015TRPBF Vergleich
Detaillierter Direktvergleich von IRFH5300TRPBF von Infineon und IRFH5015TRPBF von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IRFH5300TRPBF | IRFH5015TRPBF |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,45 | $0,62 |
| Polarity | N-Channel | — |
| Drain-Source Voltage (VDS) | 30 V | 150 V |
| Continuous Drain Current (ID) at TA=25C | 40 A | 10 A |
| Continuous Drain Current (ID) at TC=25C | 100 A | 56 A |
| Pulsed Drain Current (IDM) | 336 A | — |
| On-Resistance RDS(on) max at VGS=10V | 1.4 mOhm | — |
| On-Resistance RDS(on) max at VGS=4.5V | [DATA_NEEDED: RDS(on) at VGS=4.5V] | — |
| Gate-Source Voltage (VGS) max | +/-20 V | — |
| Total Gate Charge (Qg) | 50 nC | 33 nC |
| Power Dissition at TA=25C | 3.6 W | — |
| Power Dissipation at TC=25C | 250 W | — |
| Betriebstemperaturbereich | -55C to +150C | — |
| Gehäuse | PQFN-8 (5x6 mm) | 8-PQFN (5x6) SuperSO8 |
| Montageart | Surface Mount | Surface Mount |
| Technology | HEXFET (StrongIRFET) | IR MOSFET (HEXFET) |
| Gate Drive Level | Logic-level (5V optimized) | — |
| JEDEC Qualification | Yes | — |
| RoHS-Status | Compliant | Compliant |
| FET Type | — | N-Channel |
| On-Resistance (RDS(on)) max | — | 31 mOhm |
| Power Dissipation (TA=25C) | — | 3.6 W |
| Power Dissipation (TC=25C) | — | 156 W |
| Gate Drive Voltage (VGS recommended) | — | 10 V |
| Configuration | — | Single with built-in body diode |
| Betriebstemperatur | — | -55C to +150C (TJ max) |