IRFH5300TRPBF vs IRFH5015TRPBF Comparison
Detailed side-by-side comparison of IRFH5300TRPBF by Infineon and IRFH5015TRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IRFH5300TRPBF
IRFH5300TRPBF - 30V N-Channel HEXFET MOSFET | Infineon
IRFH5300TRPBF β ActiveInfineon
IRFH5015TRPBF
IRFH5015TRPBF - 150V N-Ch 31mOhm HEXFET MOSFET | Infineon
IRFH5015TRPBF β ActiveSpecification Comparison
| Parameter | IRFH5300TRPBF | IRFH5015TRPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.45 | $0.62 |
| Polarity | N-Channel | β |
| Drain-Source Voltage (VDS) | 30 V | 150 V |
| Continuous Drain Current (ID) at TA=25C | 40 A | 10 A |
| Continuous Drain Current (ID) at TC=25C | 100 A | 56 A |
| Pulsed Drain Current (IDM) | 336 A | β |
| On-Resistance RDS(on) max at VGS=10V | 1.4 mOhm | β |
| On-Resistance RDS(on) max at VGS=4.5V | [DATA_NEEDED: RDS(on) at VGS=4.5V] | β |
| Gate-Source Voltage (VGS) max | +/-20 V | β |
| Total Gate Charge (Qg) | 50 nC | 33 nC |
| Power Dissition at TA=25C | 3.6 W | β |
| Power Dissipation at TC=25C | 250 W | β |
| Operating Temperature Range | -55C to +150C | β |
| Package | PQFN-8 (5x6 mm) | 8-PQFN (5x6) SuperSO8 |
| Mounting Type | Surface Mount | Surface Mount |
| Technology | HEXFET (StrongIRFET) | IR MOSFET (HEXFET) |
| Gate Drive Level | Logic-level (5V optimized) | β |
| JEDEC Qualification | Yes | β |
| RoHS Status | Compliant | Compliant |
| FET Type | β | N-Channel |
| On-Resistance (RDS(on)) max | β | 31 mOhm |
| Power Dissipation (TA=25C) | β | 3.6 W |
| Power Dissipation (TC=25C) | β | 156 W |
| Gate Drive Voltage (VGS recommended) | β | 10 V |
| Configuration | β | Single with built-in body diode |
| Operating Temperature | β | -55C to +150C (TJ max) |