IRFR120NTRLPBF vs IRFR5305TRLPBF Vergleich
Detaillierter Direktvergleich von IRFR120NTRLPBF von Infineon und IRFR5305TRLPBF von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IRFR120NTRLPBF | IRFR5305TRLPBF |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,62 | $0,38 |
| FET Type | N-Channel | — |
| Technology | IR MOSFET (HEXFET) | HEXFET fifth-generation planar MOSFET |
| Drain-Source Voltage (VDS) | 100 V | -55 V |
| Continuous Drain Current (ID) at TC=25C | 9.4 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: pulsed drain current] |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max rating] | ±20 V |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical] | [DATA_NEEDED: VGS(th) range] |
| On-Resistance RDS(on) max at VGS=10V | 210 mΩ | — |
| Total Gate Charge (Qg) | 16.7 nC | — |
| Power Dissipation (PD) at TC=25C | 48 W | — |
| Betriebs-Sperrschichttemperaturbereich | -55C to +175C | — |
| Avalanche Energy Rated | Yes (fully avalanche rated) | — |
| Gehäuse | PG-TO252-3 (DPAK) | TO-252AA (DPAK), surface mount |
| Montageart | Surface Mount | Surface Mount |
| RoHS-Status | Compliant | — |
| Lead-Free Finish | Yes (Pb-free) | — |
| Polarity / Channel Type | — | P-Channel |
| Continuous Drain Current (ID) at Tc=25C | — | -31 A |
| RDS(on) max at VGS=-10V | — | 65 mΩ |
| RDS(on) max at VGS=-5V | — | [DATA_NEEDED: RDS(on) at VGS=-5V] |
| Power Dissipation (PD) at Tc=25C | — | 110 W |
| Betriebs-Sperrschichttemperatur | — | -55C to +175C |
| Avalanche Rated | — | Yes (fully avalanche rated) |
| Lead-Free / RoHS | — | Yes (Pb-free, suffix "PBF") |
| Tape & Reel Orientation | — | Left orientation (TRLPBF = Tape & Reel, Left) |