IRFR120NTRLPBF vs IRFR5305TRLPBF 对比

详细并排对比 IRFR120NTRLPBF 出自 Infineon 和 IRFR5305TRLPBF 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

规格对比

参数 IRFR120NTRLPBF IRFR5305TRLPBF
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.62 $0.38
FET Type N-Channel —
Technology IR MOSFET (HEXFET) HEXFET fifth-generation planar MOSFET
Drain-Source Voltage (VDS) 100 V -55 V
Continuous Drain Current (ID) at TC=25C 9.4 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] [DATA_NEEDED: pulsed drain current]
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS max rating] ±20 V
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical] [DATA_NEEDED: VGS(th) range]
On-Resistance RDS(on) max at VGS=10V 210 mΩ —
Total Gate Charge (Qg) 16.7 nC —
Power Dissipation (PD) at TC=25C 48 W —
工作结温范围 -55C to +175C —
Avalanche Energy Rated Yes (fully avalanche rated) —
封装 PG-TO252-3 (DPAK) TO-252AA (DPAK), surface mount
安装类型 Surface Mount Surface Mount
RoHS 状态 Compliant —
Lead-Free Finish Yes (Pb-free) —
Polarity / Channel Type — P-Channel
Continuous Drain Current (ID) at Tc=25C — -31 A
RDS(on) max at VGS=-10V — 65 mΩ
RDS(on) max at VGS=-5V — [DATA_NEEDED: RDS(on) at VGS=-5V]
Power Dissipation (PD) at Tc=25C — 110 W
工作结温 — -55C to +175C
Avalanche Rated — Yes (fully avalanche rated)
Lead-Free / RoHS — Yes (Pb-free, suffix "PBF")
Tape & Reel Orientation — Left orientation (TRLPBF = Tape & Reel, Left)

数据手册与资源

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