IRFR220NPBF vs IRFR4620TRLPBF Vergleich
Detaillierter Direktvergleich von IRFR220NPBF von Infineon und IRFR4620TRLPBF von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IRFR220NPBF | IRFR4620TRLPBF |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,74 | $1,72 |
| FET Type | N-Channel MOSFET, Metal Oxide | — |
| Drain-to-Source Voltage (VDS) | 200 V | — |
| Continuous Drain Current (ID) at TC=25C | 5 A | — |
| Power Dissipation (PD) at TC=25C | 43 W | — |
| Static Drain-Source On-Resistance (RDS(on)) max | 0.6 ohm at VGS = 10 V | — |
| Montageart | Surface Mount | Surface Mount |
| Gehäuse / Bauform | TO-252AA (DPAK) | TO-252AA (DPAK) |
| Technology | HEXFET (Planar) | IR MOSFET |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: gate threshold voltage] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: total gate charge] | — |
| Betriebstemperaturbereich | -55C to +150C (junction) | — |
| Lead-Free / RoHS | Yes, lead-free (PBF suffix) | — |
| Avalanche Energy Rated | Yes (per datasheet characterization) | — |
| Pin-Anzahl | 3 (Gate, Drain, Source) plus tab | — |
| MSL-Level | 1 (per JEDEC J-STD-020) | 1 (Unlimited) |
| Manufacturer | — | Infineon Technologies |
| Part Number | — | IRFR4620TRLPBF |
| Transistortyp | — | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | — | 200 V |
| Continuous Drain Current (ID) | — | 24 A at Tc |
| On-Resistance (RDS(on)) | — | 78 mOhm max at VGS=10V |
| Gate Charge (Qg) | — | 25 nC typical |
| Power Dissipation (PD) | — | 144 W at Tc |
| Betriebstemperatur | — | -55C to +175C |
| Lead Free | — | Yes |
| RoHS-Status | — | Compliant |