IRFR220NPBF vs IRFR4620TRLPBF 对比

详细并排对比 IRFR220NPBF 出自 Infineon 和 IRFR4620TRLPBF 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

规格对比

参数 IRFR220NPBF IRFR4620TRLPBF
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.74 $1.72
FET Type N-Channel MOSFET, Metal Oxide —
Drain-to-Source Voltage (VDS) 200 V —
Continuous Drain Current (ID) at TC=25C 5 A —
Power Dissipation (PD) at TC=25C 43 W —
Static Drain-Source On-Resistance (RDS(on)) max 0.6 ohm at VGS = 10 V —
安装类型 Surface Mount Surface Mount
封装 / 外壳 TO-252AA (DPAK) TO-252AA (DPAK)
Technology HEXFET (Planar) IR MOSFET
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: gate threshold voltage] —
Total Gate Charge (Qg) [DATA_NEEDED: total gate charge] —
工作温度范围 -55C to +150C (junction) —
Lead-Free / RoHS Yes, lead-free (PBF suffix) —
Avalanche Energy Rated Yes (per datasheet characterization) —
引脚数量 3 (Gate, Drain, Source) plus tab —
MSL 等级 1 (per JEDEC J-STD-020) 1 (Unlimited)
Manufacturer — Infineon Technologies
Part Number — IRFR4620TRLPBF
晶体管类型 — N-Channel MOSFET
Drain-Source Voltage (VDS) — 200 V
Continuous Drain Current (ID) — 24 A at Tc
On-Resistance (RDS(on)) — 78 mOhm max at VGS=10V
Gate Charge (Qg) — 25 nC typical
Power Dissipation (PD) — 144 W at Tc
工作温度 — -55C to +175C
Lead Free — Yes
RoHS 状态 — Compliant

数据手册与资源

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