IRFR3411TRPBF vs IRFZ34NPBF Vergleich

Detaillierter Direktvergleich von IRFR3411TRPBF von Infineon und IRFZ34NPBF von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter IRFR3411TRPBF IRFZ34NPBF
Marke Infineon Infineon
Kategorie MOSFETs MOSFETs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $0,55 $0,61
Polarity N-Channel —
FET Type MOSFET (Metal Oxide) N-Channel, Enhancement Mode
V(BR)DSS (Drain-Source Breakdown Voltage) 100 V —
RDS(on) max @ VGS=10V 44 mOhm —
Continuous Drain Current (Id) @ Tc 32 A —
Pulsed Drain Current (Idm) [DATA_NEEDED: pulsed drain current] —
Power Dissipation (Pd) @ Tc 130 W —
Gate Charge (Qg) 48 nC —
Operating Mode Enhancement —
Maximum Junction Temperature 175 C 175 C
Betriebstemperaturbereich -55 C to +175 C -55 C to +175 C
Gehäuse TO-252AA (DPAK) TO-220AB (3-pin + tab, through-hole)
Montageart Surface Mount Through Hole
Anzahl der Pins 3 —
Technology HEXFET Power MOSFET (IR) HEXFET (Planar DMOS, 5th generation)
Avalanche Rated Yes (fully avalanche rated) —
dv/dt Rating Dynamic dv/dt rated —
Lead-Free / RoHS Yes (Lead-free, PBF suffix) —
Manufacturer — Infineon Technologies (formerly International Rectifier)
Part Status — Active
Drain-Source Voltage (V_DSS) — 55 V
Continuous Drain Current (I_D) at Tc=25C — 29 A
Pulsed Drain Current (I_DM) — [DATA_NEEDED: pulsed drain current]
Power Dissipation (P_D) at Tc=25C — 68 W
On-Resistance R_DS(on) max at V_GS=10V — 40 mOhm
Gate Charge (Q_g) typ — 22.7 nC
Gate Threshold Voltage V_GS(th) typ — [DATA_NEEDED: gate threshold voltage]
Input Capacitance (C_iss) typ — [DATA_NEEDED: input capacitance]
Lead-Free Status — Yes (Pb-free, RoHS compliant)
Qualification — JEDEC standard
RoHS-Status — Compliant
Configuration — Single N-Channel, 3-pin (3+tab)

Datenblätter & Ressourcen

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