IRFR3411TRPBF vs IRFZ34NPBF 比較
詳細な並列比較: IRFR3411TRPBF メーカー: Infineon および IRFZ34NPBF メーカー: Infineon。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
仕様比較
| パラメータ | IRFR3411TRPBF | IRFZ34NPBF |
|---|---|---|
| ブランド | Infineon | Infineon |
| カテゴリ | MOSFETs | MOSFETs |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $0.55 | $0.61 |
| Polarity | N-Channel | — |
| FET Type | MOSFET (Metal Oxide) | N-Channel, Enhancement Mode |
| V(BR)DSS (Drain-Source Breakdown Voltage) | 100 V | — |
| RDS(on) max @ VGS=10V | 44 mOhm | — |
| Continuous Drain Current (Id) @ Tc | 32 A | — |
| Pulsed Drain Current (Idm) | [DATA_NEEDED: pulsed drain current] | — |
| Power Dissipation (Pd) @ Tc | 130 W | — |
| Gate Charge (Qg) | 48 nC | — |
| Operating Mode | Enhancement | — |
| Maximum Junction Temperature | 175 C | 175 C |
| 動作温度範囲 | -55 C to +175 C | -55 C to +175 C |
| パッケージ | TO-252AA (DPAK) | TO-220AB (3-pin + tab, through-hole) |
| 実装タイプ | Surface Mount | Through Hole |
| ピン数 | 3 | — |
| Technology | HEXFET Power MOSFET (IR) | HEXFET (Planar DMOS, 5th generation) |
| Avalanche Rated | Yes (fully avalanche rated) | — |
| dv/dt Rating | Dynamic dv/dt rated | — |
| Lead-Free / RoHS | Yes (Lead-free, PBF suffix) | — |
| Manufacturer | — | Infineon Technologies (formerly International Rectifier) |
| Part Status | — | Active |
| Drain-Source Voltage (V_DSS) | — | 55 V |
| Continuous Drain Current (I_D) at Tc=25C | — | 29 A |
| Pulsed Drain Current (I_DM) | — | [DATA_NEEDED: pulsed drain current] |
| Power Dissipation (P_D) at Tc=25C | — | 68 W |
| On-Resistance R_DS(on) max at V_GS=10V | — | 40 mOhm |
| Gate Charge (Q_g) typ | — | 22.7 nC |
| Gate Threshold Voltage V_GS(th) typ | — | [DATA_NEEDED: gate threshold voltage] |
| Input Capacitance (C_iss) typ | — | [DATA_NEEDED: input capacitance] |
| Lead-Free Status | — | Yes (Pb-free, RoHS compliant) |
| Qualification | — | JEDEC standard |
| RoHS ステータス | — | Compliant |
| Configuration | — | Single N-Channel, 3-pin (3+tab) |