IRFR3411TRPBF vs IRFZ34NPBF 비교
다음의 상세 나란히 비교: IRFR3411TRPBF 제조: Infineon 및 IRFZ34NPBF 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | IRFR3411TRPBF | IRFZ34NPBF |
|---|---|---|
| 브랜드 | Infineon | Infineon |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $0.55 | $0.61 |
| Polarity | N-Channel | — |
| FET Type | MOSFET (Metal Oxide) | N-Channel, Enhancement Mode |
| V(BR)DSS (Drain-Source Breakdown Voltage) | 100 V | — |
| RDS(on) max @ VGS=10V | 44 mOhm | — |
| Continuous Drain Current (Id) @ Tc | 32 A | — |
| Pulsed Drain Current (Idm) | [DATA_NEEDED: pulsed drain current] | — |
| Power Dissipation (Pd) @ Tc | 130 W | — |
| Gate Charge (Qg) | 48 nC | — |
| Operating Mode | Enhancement | — |
| Maximum Junction Temperature | 175 C | 175 C |
| 동작 온도 범위 | -55 C to +175 C | -55 C to +175 C |
| 패키지 | TO-252AA (DPAK) | TO-220AB (3-pin + tab, through-hole) |
| 실장 유형 | Surface Mount | Through Hole |
| 핀 수 | 3 | — |
| Technology | HEXFET Power MOSFET (IR) | HEXFET (Planar DMOS, 5th generation) |
| Avalanche Rated | Yes (fully avalanche rated) | — |
| dv/dt Rating | Dynamic dv/dt rated | — |
| Lead-Free / RoHS | Yes (Lead-free, PBF suffix) | — |
| Manufacturer | — | Infineon Technologies (formerly International Rectifier) |
| Part Status | — | Active |
| Drain-Source Voltage (V_DSS) | — | 55 V |
| Continuous Drain Current (I_D) at Tc=25C | — | 29 A |
| Pulsed Drain Current (I_DM) | — | [DATA_NEEDED: pulsed drain current] |
| Power Dissipation (P_D) at Tc=25C | — | 68 W |
| On-Resistance R_DS(on) max at V_GS=10V | — | 40 mOhm |
| Gate Charge (Q_g) typ | — | 22.7 nC |
| Gate Threshold Voltage V_GS(th) typ | — | [DATA_NEEDED: gate threshold voltage] |
| Input Capacitance (C_iss) typ | — | [DATA_NEEDED: input capacitance] |
| Lead-Free Status | — | Yes (Pb-free, RoHS compliant) |
| Qualification | — | JEDEC standard |
| RoHS 상태 | — | Compliant |
| Configuration | — | Single N-Channel, 3-pin (3+tab) |