IRFR3607TRPBF vs IRFR4620TRLPBF Vergleich
Detaillierter Direktvergleich von IRFR3607TRPBF von Infineon und IRFR4620TRLPBF von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IRFR3607TRPBF | IRFR4620TRLPBF |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,39 | $1,72 |
| Polarity / Channel Type | N-Channel | — |
| Drain-to-Source Voltage (VDS) | 75 V | — |
| Continuous Drain Current (ID, Tc) | 56 A | — |
| Calculated Die Drain Current | 80 A | — |
| On-State Resistance (RDS(on)) | 9 mOhm @ VGS=10V, ID=46A | — |
| Gate Threshold Voltage (VGS(th)) | 4 V | — |
| Total Gate Charge (Qg) | 56 nC | — |
| Gate-to-Source Voltage (VGS) Max | +/-20 V | — |
| Power Dissipation (PD, Tc) | 140 W | — |
| Thermal Resistance (RthJC) | 1.0 C/W | — |
| Betriebstemperaturbereich | -55C to +175C (TJ max 175C per datasheet convention) | — |
| Gehäuse | TO-252AA (DPAK) | — |
| Montageart | Surface Mount | Surface Mount |
| Technology | IR HEXFET (planar DMOS) | IR MOSFET |
| Avalanche SOA | Fully characterized | — |
| RoHS / Lead-Free | Compliant / Pb-free (PBF suffix, JESD-609 e3) | — |
| Manufacturer | — | Infineon Technologies |
| Part Number | — | IRFR4620TRLPBF |
| Transistortyp | — | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | — | 200 V |
| Continuous Drain Current (ID) | — | 24 A at Tc |
| On-Resistance (RDS(on)) | — | 78 mOhm max at VGS=10V |
| Gate Charge (Qg) | — | 25 nC typical |
| Power Dissipation (PD) | — | 144 W at Tc |
| Gehäuse / Bauform | — | TO-252AA (DPAK) |
| Betriebstemperatur | — | -55C to +175C |
| Lead Free | — | Yes |
| RoHS-Status | — | Compliant |
| MSL-Level | — | 1 (Unlimited) |