IRFR3607TRPBF vs IRFR4620TRLPBF 对比

详细并排对比 IRFR3607TRPBF 出自 Infineon 和 IRFR4620TRLPBF 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

规格对比

参数 IRFR3607TRPBF IRFR4620TRLPBF
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.39 $1.72
Polarity / Channel Type N-Channel —
Drain-to-Source Voltage (VDS) 75 V —
Continuous Drain Current (ID, Tc) 56 A —
Calculated Die Drain Current 80 A —
On-State Resistance (RDS(on)) 9 mOhm @ VGS=10V, ID=46A —
Gate Threshold Voltage (VGS(th)) 4 V —
Total Gate Charge (Qg) 56 nC —
Gate-to-Source Voltage (VGS) Max +/-20 V —
Power Dissipation (PD, Tc) 140 W —
Thermal Resistance (RthJC) 1.0 C/W —
工作温度范围 -55C to +175C (TJ max 175C per datasheet convention) —
封装 TO-252AA (DPAK) —
安装类型 Surface Mount Surface Mount
Technology IR HEXFET (planar DMOS) IR MOSFET
Avalanche SOA Fully characterized —
RoHS / Lead-Free Compliant / Pb-free (PBF suffix, JESD-609 e3) —
Manufacturer — Infineon Technologies
Part Number — IRFR4620TRLPBF
晶体管类型 — N-Channel MOSFET
Drain-Source Voltage (VDS) — 200 V
Continuous Drain Current (ID) — 24 A at Tc
On-Resistance (RDS(on)) — 78 mOhm max at VGS=10V
Gate Charge (Qg) — 25 nC typical
Power Dissipation (PD) — 144 W at Tc
封装 / 外壳 — TO-252AA (DPAK)
工作温度 — -55C to +175C
Lead Free — Yes
RoHS 状态 — Compliant
MSL 等级 — 1 (Unlimited)

数据手册与资源

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