IRFR3607TRPBF vs IRFR4620TRLPBF Comparison

Detailed side-by-side comparison of IRFR3607TRPBF by Infineon and IRFR4620TRLPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IRFR3607TRPBF IRFR4620TRLPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.39 $1.72
Polarity / Channel Type N-Channel —
Drain-to-Source Voltage (VDS) 75 V —
Continuous Drain Current (ID, Tc) 56 A —
Calculated Die Drain Current 80 A —
On-State Resistance (RDS(on)) 9 mOhm @ VGS=10V, ID=46A —
Gate Threshold Voltage (VGS(th)) 4 V —
Total Gate Charge (Qg) 56 nC —
Gate-to-Source Voltage (VGS) Max +/-20 V —
Power Dissipation (PD, Tc) 140 W —
Thermal Resistance (RthJC) 1.0 C/W —
Operating Temperature Range -55C to +175C (TJ max 175C per datasheet convention) —
Package TO-252AA (DPAK) —
Mounting Type Surface Mount Surface Mount
Technology IR HEXFET (planar DMOS) IR MOSFET
Avalanche SOA Fully characterized —
RoHS / Lead-Free Compliant / Pb-free (PBF suffix, JESD-609 e3) —
Manufacturer — Infineon Technologies
Part Number — IRFR4620TRLPBF
Transistor Type — N-Channel MOSFET
Drain-Source Voltage (VDS) — 200 V
Continuous Drain Current (ID) — 24 A at Tc
On-Resistance (RDS(on)) — 78 mOhm max at VGS=10V
Gate Charge (Qg) — 25 nC typical
Power Dissipation (PD) — 144 W at Tc
Package / Case — TO-252AA (DPAK)
Operating Temperature — -55C to +175C
Lead Free — Yes
RoHS Status — Compliant
MSL Level — 1 (Unlimited)

Datasheets & Resources

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