IRFR4620TRLPBF vs IRFR3806TRPBF Vergleich
Detaillierter Direktvergleich von IRFR4620TRLPBF von Infineon und IRFR3806TRPBF von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IRFR4620TRLPBF | IRFR3806TRPBF |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $1,72 | $0,52 |
| Manufacturer | Infineon Technologies | — |
| Part Number | IRFR4620TRLPBF | — |
| Transistortyp | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 200 V | 60 V |
| Continuous Drain Current (ID) | 24 A at Tc | — |
| On-Resistance (RDS(on)) | 78 mOhm max at VGS=10V | — |
| Gate Charge (Qg) | 25 nC typical | — |
| Power Dissipation (PD) | 144 W at Tc | — |
| Technology | IR MOSFET | HEXFET (IR MOSFET) |
| Gehäuse / Bauform | TO-252AA (DPAK) | TO-252AA (DPAK) |
| Montageart | Surface Mount | Surface Mount |
| Betriebstemperatur | -55C to +175C | — |
| Lead Free | Yes | — |
| RoHS-Status | Compliant | — |
| MSL-Level | 1 (Unlimited) | — |
| Transistor Polarity | — | N-Channel |
| MOSFET Operating Mode | — | Enhancement |
| Continuous Drain Current (ID) at Tc | — | 43 A |
| On-State Resistance RDS(on) max | — | 15.8 mOhm at VGS = 10 V |
| Total Gate Charge (Qg) | — | 22 nC |
| Power Dissipation (Pd) at Tc = 25 C | — | 71 W |
| Betriebstemperaturbereich | — | -55 C to +175 C |
| Gate-Source Voltage (VGS) max | — | +/- 20 V |
| Number of Units in IC | — | 1 |
| Lead-Free / RoHS | — | Yes (PBF suffix, lead-free) |
| Avalanche Rated | — | Yes (HEXFET family) |