IRFR5305TRLPBF vs IRFR1205TRPBF Vergleich
Detaillierter Direktvergleich von IRFR5305TRLPBF von Infineon und IRFR1205TRPBF von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IRFR5305TRLPBF | IRFR1205TRPBF |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,38 | $0,49 |
| Polarity / Channel Type | P-Channel | — |
| Drain-Source Voltage (VDS) | -55 V | 55 V |
| Continuous Drain Current (ID) at Tc=25C | -31 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | 160 A |
| Gate-Source Voltage (VGS) max | ±20 V | +/- 20 V |
| RDS(on) max at VGS=-10V | 65 mΩ | — |
| RDS(on) max at VGS=-5V | [DATA_NEEDED: RDS(on) at VGS=-5V] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) range] | 2 V min, 4 V max |
| Power Dissipation (PD) at Tc=25C | 110 W | — |
| Betriebs-Sperrschichttemperatur | -55C to +175C | -55C to +175C |
| Gehäuse | TO-252AA (DPAK), surface mount | TO-252AA (DPAK) |
| Montageart | Surface Mount | Surface Mount |
| Technology | HEXFET fifth-generation planar MOSFET | HEXFET (IR MOSFET, 5th generation) |
| Avalanche Rated | Yes (fully avalanche rated) | — |
| Lead-Free / RoHS | Yes (Pb-free, suffix "PBF") | — |
| Tape & Reel Orientation | Left orientation (TRLPBF = Tape & Reel, Left) | — |
| FET Type | — | N-Channel |
| Continuous Drain Current (ID) at TC=25C | — | 44 A |
| On-Resistance RDS(on) at VGS=10V | — | 27 mOhm max |
| Total Gate Charge (Qg) | — | 43.3 nC |
| Power Dissition (PD) at TC=25C | — | 107 W |
| RoHS-Status | — | Compliant (PBF suffix = lead-free) |
| Lead-Free / Halogen-Free | — | Yes / [DATA_NEEDED: halogen status] |