IRFR5305TRLPBF vs IRFR1205TRPBF Comparison

Detailed side-by-side comparison of IRFR5305TRLPBF by Infineon and IRFR1205TRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IRFR5305TRLPBF IRFR1205TRPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.38 $0.49
Polarity / Channel Type P-Channel β€”
Drain-Source Voltage (VDS) -55 V 55 V
Continuous Drain Current (ID) at Tc=25C -31 A β€”
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] 160 A
Gate-Source Voltage (VGS) max Β±20 V +/- 20 V
RDS(on) max at VGS=-10V 65 mΞ© β€”
RDS(on) max at VGS=-5V [DATA_NEEDED: RDS(on) at VGS=-5V] β€”
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) range] 2 V min, 4 V max
Power Dissipation (PD) at Tc=25C 110 W β€”
Operating Junction Temperature -55C to +175C -55C to +175C
Package TO-252AA (DPAK), surface mount TO-252AA (DPAK)
Mounting Type Surface Mount Surface Mount
Technology HEXFET fifth-generation planar MOSFET HEXFET (IR MOSFET, 5th generation)
Avalanche Rated Yes (fully avalanche rated) β€”
Lead-Free / RoHS Yes (Pb-free, suffix "PBF") β€”
Tape & Reel Orientation Left orientation (TRLPBF = Tape & Reel, Left) β€”
FET Type β€” N-Channel
Continuous Drain Current (ID) at TC=25C β€” 44 A
On-Resistance RDS(on) at VGS=10V β€” 27 mOhm max
Total Gate Charge (Qg) β€” 43.3 nC
Power Dissition (PD) at TC=25C β€” 107 W
RoHS Status β€” Compliant (PBF suffix = lead-free)
Lead-Free / Halogen-Free β€” Yes / [DATA_NEEDED: halogen status]

Datasheets & Resources

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