IRFR5305TRLPBF vs IRFR1205TRPBF Comparación
Comparación detallada lado a lado de IRFR5305TRLPBF por Infineon y IRFR1205TRPBF por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | IRFR5305TRLPBF | IRFR1205TRPBF |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,38 | $0,49 |
| Polarity / Channel Type | P-Channel | — |
| Drain-Source Voltage (VDS) | -55 V | 55 V |
| Continuous Drain Current (ID) at Tc=25C | -31 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | 160 A |
| Gate-Source Voltage (VGS) max | ±20 V | +/- 20 V |
| RDS(on) max at VGS=-10V | 65 mΩ | — |
| RDS(on) max at VGS=-5V | [DATA_NEEDED: RDS(on) at VGS=-5V] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) range] | 2 V min, 4 V max |
| Power Dissipation (PD) at Tc=25C | 110 W | — |
| Temperatura de unión de funcionamiento | -55C to +175C | -55C to +175C |
| Encapsulado | TO-252AA (DPAK), surface mount | TO-252AA (DPAK) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Technology | HEXFET fifth-generation planar MOSFET | HEXFET (IR MOSFET, 5th generation) |
| Avalanche Rated | Yes (fully avalanche rated) | — |
| Lead-Free / RoHS | Yes (Pb-free, suffix "PBF") | — |
| Tape & Reel Orientation | Left orientation (TRLPBF = Tape & Reel, Left) | — |
| FET Type | — | N-Channel |
| Continuous Drain Current (ID) at TC=25C | — | 44 A |
| On-Resistance RDS(on) at VGS=10V | — | 27 mOhm max |
| Total Gate Charge (Qg) | — | 43.3 nC |
| Power Dissition (PD) at TC=25C | — | 107 W |
| Estado RoHS | — | Compliant (PBF suffix = lead-free) |
| Lead-Free / Halogen-Free | — | Yes / [DATA_NEEDED: halogen status] |