IRFR5305TRPBF vs IPD380P06NMATMA1 Vergleich
Detaillierter Direktvergleich von IRFR5305TRPBF von Infineon und IPD380P06NMATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IRFR5305TRPBF | IPD380P06NMATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,32 | $0,49 |
| Polarity | P-Channel | — |
| Drain-Source Voltage (VDS) Max | -55 V | — |
| Continuous Drain Current (ID) at TC=25C | 31 A | — |
| Continuous Drain Current (ID) at TC=100C | [DATA_NEEDED: ID at TC=100C] | — |
| On-Resistance (RDS(on)) Max at VGS=-10V | 65 mOhm | — |
| Gate-Source Threshold Voltage (VGS(th)) | -2 V to -4 V | — |
| Gate Charge (Qg) Typ | [DATA_NEEDED: Qg typ] | — |
| Power Dissipation (PD) at TC=25C | 110 W | — |
| Single-Pulse Avalanche Energy (EAS) | 270 mJ | — |
| Betriebstemperaturbereich | -55 C to +175 C | -55 C to +150 C (junction) |
| Gehäuse | TO-252AA (DPAK) | PG-TO252-3 (DPAK), surface mount |
| Montageart | Surface Mount | Surface Mount |
| Technology | HEXFET (IR MOSFET) | OptiMOS P-channel trench |
| MSL-Level | 1 | 1 |
| RoHS-Status | Compliant (Pb-free PBF suffix) | Compliant |
| Lead-Free Finish | Yes (PBF suffix) | — |
| Polarity / Channel Type | — | P-Channel |
| Drain-Source Voltage V(BR)DSS | — | 60 V |
| Kontinuierlicher Drain-Strom (TC=25°C) | — | 35 A |
| Power Dissipation (Tc) | — | 125 W |
| Gate Drive | — | Logic-level compatible |
| Avalanche Rated | — | Yes (per manufacturer datasheet) |
| Target Applications | — | Reverse-polarity protection, load switch, BMS, high-side switch |
| Lead-Free | — | Yes |
| Automotive Qualified | — | Not specified in provided data [DATA_NEEDED: AEC-Q100 grade] |