IRFR5305TRPBF vs IPD380P06NMATMA1 对比

详细并排对比 IRFR5305TRPBF 出自 Infineon 和 IPD380P06NMATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IRFR5305TRPBF IRFR5305TRPBF - 55V P-Channel HEXFET MOSFET | Infineon

IRFR5305TRPBF - 55V P-Channel HEXFET MOSFET | Infineon

IRFR5305TRPBF ✓ 量产中
Infineon
IPD380P06NMATMA1 IPD380P06NMATMA1 - 60V P-Ch MOSFET 35A OptiMOS | Infineon

IPD380P06NMATMA1 - 60V P-Ch MOSFET 35A OptiMOS | Infineon

IPD380P06NMATMA1 ✓ 量产中

规格对比

参数 IRFR5305TRPBF IPD380P06NMATMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.32 $0.49
Polarity P-Channel —
Drain-Source Voltage (VDS) Max -55 V —
Continuous Drain Current (ID) at TC=25C 31 A —
Continuous Drain Current (ID) at TC=100C [DATA_NEEDED: ID at TC=100C] —
On-Resistance (RDS(on)) Max at VGS=-10V 65 mOhm —
Gate-Source Threshold Voltage (VGS(th)) -2 V to -4 V —
Gate Charge (Qg) Typ [DATA_NEEDED: Qg typ] —
Power Dissipation (PD) at TC=25C 110 W —
Single-Pulse Avalanche Energy (EAS) 270 mJ —
工作温度范围 -55 C to +175 C -55 C to +150 C (junction)
封装 TO-252AA (DPAK) PG-TO252-3 (DPAK), surface mount
安装类型 Surface Mount Surface Mount
Technology HEXFET (IR MOSFET) OptiMOS P-channel trench
MSL 等级 1 1
RoHS 状态 Compliant (Pb-free PBF suffix) Compliant
Lead-Free Finish Yes (PBF suffix) —
Polarity / Channel Type — P-Channel
Drain-Source Voltage V(BR)DSS — 60 V
连续漏极电流(TC=25°C) — 35 A
Power Dissipation (Tc) — 125 W
Gate Drive — Logic-level compatible
Avalanche Rated — Yes (per manufacturer datasheet)
Target Applications — Reverse-polarity protection, load switch, BMS, high-side switch
Lead-Free — Yes
Automotive Qualified — Not specified in provided data [DATA_NEEDED: AEC-Q100 grade]

数据手册与资源

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