IRFR5410TRRPBF vs IRFR5305TRLPBF Vergleich

Detaillierter Direktvergleich von IRFR5410TRRPBF von Infineon und IRFR5305TRLPBF von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter IRFR5410TRRPBF IRFR5305TRLPBF
Marke Infineon Infineon
Kategorie MOSFETs MOSFETs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $0,49 $0,38
Polarity P-Channel —
FET Type MOSFET (Metal Oxide Semiconductor) —
Technology HEXFET (5th Generation) HEXFET fifth-generation planar MOSFET
VDS (Drain-Source Voltage) -100 V —
VGS (Gate-Source Voltage) ±20 V —
VGS(th) (Gate Threshold) -2 V to -4 V —
Continuous Drain Current (ID) at Tc=25C -13 A -31 A
Continuous Drain Current (ID) at Tc=100C [DATA_NEEDED: ID at 100C] —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] [DATA_NEEDED: pulsed drain current]
RDS(on) max at VGS=-10V 205 mΩ 65 mΩ
RDS(on) typical at VGS=-10V 26 mΩ (per Mouser listing for IRFR5410TRPBF) —
Total Gate Charge (Qg) 70 nC —
Power Dissipation (Pd) at Tc=25C 66 W —
Betriebs-Sperrschichttemperatur -55C to +150C -55C to +175C
Gehäuse TO-252AA (DPAK) TO-252AA (DPAK), surface mount
Montageart Surface Mount Surface Mount
Avalanche Rated Yes Yes (fully avalanche rated)
Lead-Free / RoHS Yes (PBF suffix indicates lead-free) Yes (Pb-free, suffix "PBF")
Polarity / Channel Type — P-Channel
Drain-Source Voltage (VDS) — -55 V
Gate-Source Voltage (VGS) max — ±20 V
RDS(on) max at VGS=-5V — [DATA_NEEDED: RDS(on) at VGS=-5V]
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) range]
Power Dissipation (PD) at Tc=25C — 110 W
Tape & Reel Orientation — Left orientation (TRLPBF = Tape & Reel, Left)

Datenblätter & Ressourcen

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