IRFR5410TRRPBF vs IRFR5305TRLPBF 비교
다음의 상세 나란히 비교: IRFR5410TRRPBF 제조: Infineon 및 IRFR5305TRLPBF 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | IRFR5410TRRPBF | IRFR5305TRLPBF |
|---|---|---|
| 브랜드 | Infineon | Infineon |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $0.49 | $0.38 |
| Polarity | P-Channel | — |
| FET Type | MOSFET (Metal Oxide Semiconductor) | — |
| Technology | HEXFET (5th Generation) | HEXFET fifth-generation planar MOSFET |
| VDS (Drain-Source Voltage) | -100 V | — |
| VGS (Gate-Source Voltage) | ±20 V | — |
| VGS(th) (Gate Threshold) | -2 V to -4 V | — |
| Continuous Drain Current (ID) at Tc=25C | -13 A | -31 A |
| Continuous Drain Current (ID) at Tc=100C | [DATA_NEEDED: ID at 100C] | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: pulsed drain current] |
| RDS(on) max at VGS=-10V | 205 mΩ | 65 mΩ |
| RDS(on) typical at VGS=-10V | 26 mΩ (per Mouser listing for IRFR5410TRPBF) | — |
| Total Gate Charge (Qg) | 70 nC | — |
| Power Dissipation (Pd) at Tc=25C | 66 W | — |
| 동작 접합 온도 | -55C to +150C | -55C to +175C |
| 패키지 | TO-252AA (DPAK) | TO-252AA (DPAK), surface mount |
| 실장 유형 | Surface Mount | Surface Mount |
| Avalanche Rated | Yes | Yes (fully avalanche rated) |
| Lead-Free / RoHS | Yes (PBF suffix indicates lead-free) | Yes (Pb-free, suffix "PBF") |
| Polarity / Channel Type | — | P-Channel |
| Drain-Source Voltage (VDS) | — | -55 V |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| RDS(on) max at VGS=-5V | — | [DATA_NEEDED: RDS(on) at VGS=-5V] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) range] |
| Power Dissipation (PD) at Tc=25C | — | 110 W |
| Tape & Reel Orientation | — | Left orientation (TRLPBF = Tape & Reel, Left) |