IRFR5505TRPBF vs IRFR6215TRLPBF Vergleich
Detaillierter Direktvergleich von IRFR5505TRPBF von Infineon und IRFR6215TRLPBF von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IRFR5505TRPBF | IRFR6215TRLPBF |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,48 | $0,38 |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | — |
| Series | HEXFET | — |
| Polarity | P-Channel | P-Channel |
| Technology | IR MOSFET (HEXFET 5th generation) | HEXFET Power MOSFET (Fifth Generation) |
| Drain-Source Voltage (VDS) max | -55 V | — |
| Continuous Drain Current (ID) at TC=25C | -18 A | — |
| Pulsed Drain Current (IDM) | -72 A | [DATA_NEEDED: pulsed drain current value] |
| Gate-Source Voltage (VGS) max | +/-20 V | ±20 V |
| On-Resistance RDS(on) max at VGS=-10V | 110 mOhm | — |
| Total Gate Charge (Qg) | 21.3 nC | — |
| Gate-Source Charge (Qgs) | [DATA_NEEDED: Qgs] | — |
| Gate-Drain Charge (Qgd) | [DATA_NEEDED: Qgd] | — |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss] | — |
| Output Capacitance (Coss) | [DATA_NEEDED: Coss] | — |
| Rise Time (tr) | [DATA_NEEDED: tr] | — |
| Fall Time (tf) | [DATA_NEEDED: tf] | — |
| Maximum Power Dissipation (PD) at TC=25C | 57 W | — |
| Betriebs-Sperrschichttemperatur | -55 C to +175 C | — |
| Thermal Resistance Junction-to-Case (RthJC) | 2.2 C/W | — |
| Thermal Resistance Junction-to-Ambient (RthJA) | 50 C/W (typical, DPAK on 1 oz copper) | — |
| Gehäuse | TO-252AA (DPAK), surface mount | TO-252AA (DPAK) |
| Montageart | Surface Mount | Surface Mount |
| RoHS-Status | Compliant (PBF suffix) | Compliant |
| Lead-Free | Yes (PBF suffix) | Yes |
| Drain-Source Voltage (VDS) | — | -150 V |
| Continuous Drain Current (ID) at Tc=25C | — | -13 A |
| RDS(on) max at VGS=-10V | — | 580 mOhm |
| Total Gate Charge (Qg) typ | — | 44 nC |
| Power Dissipation (PD) at Tc=25C | — | 110 W |
| Maximum Operating Junction Temperature | — | 175 C |
| MSL-Level | — | 1 |