IRFR5505TRPBF vs IRFR6215TRLPBF Comparison
Detailed side-by-side comparison of IRFR5505TRPBF by Infineon and IRFR6215TRLPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IRFR5505TRPBF | IRFR6215TRLPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.48 | $0.38 |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | β |
| Series | HEXFET | β |
| Polarity | P-Channel | P-Channel |
| Technology | IR MOSFET (HEXFET 5th generation) | HEXFET Power MOSFET (Fifth Generation) |
| Drain-Source Voltage (VDS) max | -55 V | β |
| Continuous Drain Current (ID) at TC=25C | -18 A | β |
| Pulsed Drain Current (IDM) | -72 A | [DATA_NEEDED: pulsed drain current value] |
| Gate-Source Voltage (VGS) max | +/-20 V | Β±20 V |
| On-Resistance RDS(on) max at VGS=-10V | 110 mOhm | β |
| Total Gate Charge (Qg) | 21.3 nC | β |
| Gate-Source Charge (Qgs) | [DATA_NEEDED: Qgs] | β |
| Gate-Drain Charge (Qgd) | [DATA_NEEDED: Qgd] | β |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss] | β |
| Output Capacitance (Coss) | [DATA_NEEDED: Coss] | β |
| Rise Time (tr) | [DATA_NEEDED: tr] | β |
| Fall Time (tf) | [DATA_NEEDED: tf] | β |
| Maximum Power Dissipation (PD) at TC=25C | 57 W | β |
| Operating Junction Temperature | -55 C to +175 C | β |
| Thermal Resistance Junction-to-Case (RthJC) | 2.2 C/W | β |
| Thermal Resistance Junction-to-Ambient (RthJA) | 50 C/W (typical, DPAK on 1 oz copper) | β |
| Package | TO-252AA (DPAK), surface mount | TO-252AA (DPAK) |
| Mounting Type | Surface Mount | Surface Mount |
| RoHS Status | Compliant (PBF suffix) | Compliant |
| Lead-Free | Yes (PBF suffix) | Yes |
| Drain-Source Voltage (VDS) | β | -150 V |
| Continuous Drain Current (ID) at Tc=25C | β | -13 A |
| RDS(on) max at VGS=-10V | β | 580 mOhm |
| Total Gate Charge (Qg) typ | β | 44 nC |
| Power Dissipation (PD) at Tc=25C | β | 110 W |
| Maximum Operating Junction Temperature | β | 175 C |
| MSL Level | β | 1 |