IRFR5505TRPBF vs IRFR6215TRLPBF 对比
详细并排对比 IRFR5505TRPBF 出自 Infineon 和 IRFR6215TRLPBF 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IRFR5505TRPBF | IRFR6215TRLPBF |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.48 | $0.38 |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | — |
| Series | HEXFET | — |
| Polarity | P-Channel | P-Channel |
| Technology | IR MOSFET (HEXFET 5th generation) | HEXFET Power MOSFET (Fifth Generation) |
| Drain-Source Voltage (VDS) max | -55 V | — |
| Continuous Drain Current (ID) at TC=25C | -18 A | — |
| Pulsed Drain Current (IDM) | -72 A | [DATA_NEEDED: pulsed drain current value] |
| Gate-Source Voltage (VGS) max | +/-20 V | ±20 V |
| On-Resistance RDS(on) max at VGS=-10V | 110 mOhm | — |
| Total Gate Charge (Qg) | 21.3 nC | — |
| Gate-Source Charge (Qgs) | [DATA_NEEDED: Qgs] | — |
| Gate-Drain Charge (Qgd) | [DATA_NEEDED: Qgd] | — |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss] | — |
| Output Capacitance (Coss) | [DATA_NEEDED: Coss] | — |
| Rise Time (tr) | [DATA_NEEDED: tr] | — |
| Fall Time (tf) | [DATA_NEEDED: tf] | — |
| Maximum Power Dissipation (PD) at TC=25C | 57 W | — |
| 工作结温 | -55 C to +175 C | — |
| Thermal Resistance Junction-to-Case (RthJC) | 2.2 C/W | — |
| Thermal Resistance Junction-to-Ambient (RthJA) | 50 C/W (typical, DPAK on 1 oz copper) | — |
| 封装 | TO-252AA (DPAK), surface mount | TO-252AA (DPAK) |
| 安装类型 | Surface Mount | Surface Mount |
| RoHS 状态 | Compliant (PBF suffix) | Compliant |
| Lead-Free | Yes (PBF suffix) | Yes |
| Drain-Source Voltage (VDS) | — | -150 V |
| Continuous Drain Current (ID) at Tc=25C | — | -13 A |
| RDS(on) max at VGS=-10V | — | 580 mOhm |
| Total Gate Charge (Qg) typ | — | 44 nC |
| Power Dissipation (PD) at Tc=25C | — | 110 W |
| Maximum Operating Junction Temperature | — | 175 C |
| MSL 等级 | — | 1 |