IRFR9024NTRPBF vs IRFR9024NTRLPBF Vergleich
Detaillierter Direktvergleich von IRFR9024NTRPBF von Infineon und IRFR9024NTRLPBF von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IRFR9024NTRPBF | IRFR9024NTRLPBF |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,17 | $0,32 |
| Polarity | P-Channel | P-Channel |
| VDS (Drain-Source Voltage) | -55 V | — |
| Continuous Drain Current (Tc=25C) | -11 A | — |
| Gepulster Drain-Strom | [DATA_NEEDED: pulsed drain current] | — |
| VGS (Gate-Source Voltage) | ±20 V | — |
| VGS(th) (Threshold Voltage) | [DATA_NEEDED: VGS(th) typical] | — |
| RDS(on) Max at VGS=-10V | 175 mOhm | — |
| Total Gate Charge (Qg) | 12.7 nC | — |
| Maximum Power Dissipation (Tc=25C) | 38 W | — |
| Betriebs-Sperrschichttemperatur | -55C to +175C | — |
| Gehäuse | TO-252AA (DPAK) | — |
| Montageart | Surface Mount | Surface Mount |
| Pin-Anzahl | 3 | 3 (Drain, Gate, Source + Tab) |
| Technology | HEXFET (Gen 5) | HEXFET (Generation 5) |
| RoHS-Status | Compliant | — |
| MOSFET Operating Mode | — | Enhancement |
| Drain-Source Voltage (VDS) | — | -55 V |
| Continuous Drain Current (ID) at TC=25C | — | -11 A |
| On-Resistance RDS(on) max at VGS=-10V | — | 175 mOhm |
| Gate-Source Voltage (VGS) max | — | +/-20 V |
| Power Dissipation (PD) at TC=25C | — | 38 W |
| Gate Charge (Qg) typical | — | 12.7 nC |
| Package Type | — | TO-252AA (DPAK) |
| Betriebstemperaturbereich | — | -55C to +175C |
| Lead-Free / RoHS | — | Yes (LPBF suffix) |
| Reel Orientation | — | Left (TRL suffix) |