IRFR9024NTRPBF vs IRFR9024NTRLPBF 对比

详细并排对比 IRFR9024NTRPBF 出自 Infineon 和 IRFR9024NTRLPBF 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IRFR9024NTRPBF IRFR9024NTRPBF - 55V 11A P-Channel HEXFET MOSFET | Infineon

IRFR9024NTRPBF - 55V 11A P-Channel HEXFET MOSFET | Infineon

IRFR9024NTRPBF ✓ 量产中
Infineon
IRFR9024NTRLPBF IRFR9024NTRLPBF - 55V P-Channel HEXFET MOSFET | Infineon

IRFR9024NTRLPBF - 55V P-Channel HEXFET MOSFET | Infineon

IRFR9024NTRLPBF ✓ 量产中

规格对比

参数 IRFR9024NTRPBF IRFR9024NTRLPBF
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.17 $0.32
Polarity P-Channel P-Channel
VDS (Drain-Source Voltage) -55 V —
Continuous Drain Current (Tc=25C) -11 A —
脉冲漏极电流 [DATA_NEEDED: pulsed drain current] —
VGS (Gate-Source Voltage) ±20 V —
VGS(th) (Threshold Voltage) [DATA_NEEDED: VGS(th) typical] —
RDS(on) Max at VGS=-10V 175 mOhm —
Total Gate Charge (Qg) 12.7 nC —
Maximum Power Dissipation (Tc=25C) 38 W —
工作结温 -55C to +175C —
封装 TO-252AA (DPAK) —
安装类型 Surface Mount Surface Mount
引脚数量 3 3 (Drain, Gate, Source + Tab)
Technology HEXFET (Gen 5) HEXFET (Generation 5)
RoHS 状态 Compliant —
MOSFET Operating Mode — Enhancement
Drain-Source Voltage (VDS) — -55 V
Continuous Drain Current (ID) at TC=25C — -11 A
On-Resistance RDS(on) max at VGS=-10V — 175 mOhm
Gate-Source Voltage (VGS) max — +/-20 V
Power Dissipation (PD) at TC=25C — 38 W
Gate Charge (Qg) typical — 12.7 nC
Package Type — TO-252AA (DPAK)
工作温度范围 — -55C to +175C
Lead-Free / RoHS — Yes (LPBF suffix)
Reel Orientation — Left (TRL suffix)

数据手册与资源

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