IRFS3006TRL7PP vs IPB60R040CFD7ATMA1 Vergleich
Detaillierter Direktvergleich von IRFS3006TRL7PP von Infineon und IPB60R040CFD7ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
IPB60R040CFD7ATMA1 - 600V 50A 40mΩ CoolMOS CFD7 MOSFET | Infineon
IPB60R040CFD7ATMA1 ✓ AktivSpezifikationsvergleich
| Parameter | IRFS3006TRL7PP | IPB60R040CFD7ATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $1,75 | $5,19 |
| Transistortyp | N-Channel MOSFET | — |
| Technology | HEXFET (IR MOSFET™ planar) | Superjunction (SJ) N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 60 V | 600 V |
| Continuous Drain Current (ID) at Tc | 240 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current rating] | [DATA_NEEDED: pulsed drain current] |
| On-Resistance RDS(on) max | 2.1 mΩ (per Mouser snippet) | — |
| On-Resistance RDS(on) typ | 1.5 mΩ | — |
| Gate Charge (Qg) | 200 nC (typical) | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/min/max] | — |
| Power Dissipation (PD) at Tc | 375 W | — |
| Betriebs-Sperrschichttemperatur | -55 °C to +175 °C | — |
| Gehäuse | D2PAK (TO-263), 7-Lead, Surface Mount | PG-TO263-3-2 (D2PAK) |
| Montageart | Surface Mount | Surface Mount |
| Body Diode | Intrinsic, avalanche-rated | — |
| MSL-Level | 1 (unlimited) | 1 |
| RoHS-Status | Compliant | Compliant |
| Avalanche Energy (EAS) | [DATA_NEEDED: single-pulse avalanche energy] | — |
| RθJC Thermal Resistance | [DATA_NEEDED: junction-to-case thermal resistance] | — |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | CoolMOS CFD7 |
| Continuous Drain Current (ID, Tc=25°C) | — | 50 A |
| On-Resistance RDS(on) max @ VGS=10V | — | 40 mΩ |
| Gate Threshold Voltage VGS(th) typ | — | 4 V |
| Total Gate Charge Qg typ | — | [DATA_NEEDED: Qg] |
| Verlustleistung (TC=25°C) | — | 227 W |
| Betriebstemperaturbereich | — | -55°C to +150°C |
| Integrated Body Diode | — | Yes - ultra-fast CoolMOS CFD7 diode |
| Lead-Free | — | Yes |
| Target Applications | — | Soft-switching topologies (ZVS phase-shift full-bridge, LLC) |