IRFS3006TRL7PP vs IPB60R040CFD7ATMA1 Comparación
Comparación detallada lado a lado de IRFS3006TRL7PP por Infineon y IPB60R040CFD7ATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
IPB60R040CFD7ATMA1 - 600V 50A 40mΩ CoolMOS CFD7 MOSFET | Infineon
IPB60R040CFD7ATMA1 ✓ ActivoComparación de especificaciones
| Parámetro | IRFS3006TRL7PP | IPB60R040CFD7ATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $1,75 | $5,19 |
| Tipo de transistor | N-Channel MOSFET | — |
| Technology | HEXFET (IR MOSFET™ planar) | Superjunction (SJ) N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 60 V | 600 V |
| Continuous Drain Current (ID) at Tc | 240 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current rating] | [DATA_NEEDED: pulsed drain current] |
| On-Resistance RDS(on) max | 2.1 mΩ (per Mouser snippet) | — |
| On-Resistance RDS(on) typ | 1.5 mΩ | — |
| Gate Charge (Qg) | 200 nC (typical) | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/min/max] | — |
| Power Dissipation (PD) at Tc | 375 W | — |
| Temperatura de unión de funcionamiento | -55 °C to +175 °C | — |
| Encapsulado | D2PAK (TO-263), 7-Lead, Surface Mount | PG-TO263-3-2 (D2PAK) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Body Diode | Intrinsic, avalanche-rated | — |
| Nivel MSL | 1 (unlimited) | 1 |
| Estado RoHS | Compliant | Compliant |
| Avalanche Energy (EAS) | [DATA_NEEDED: single-pulse avalanche energy] | — |
| RθJC Thermal Resistance | [DATA_NEEDED: junction-to-case thermal resistance] | — |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | CoolMOS CFD7 |
| Continuous Drain Current (ID, Tc=25°C) | — | 50 A |
| On-Resistance RDS(on) max @ VGS=10V | — | 40 mΩ |
| Gate Threshold Voltage VGS(th) typ | — | 4 V |
| Total Gate Charge Qg typ | — | [DATA_NEEDED: Qg] |
| Disipación de potencia (TC=25°C) | — | 227 W |
| Rango de temperatura de funcionamiento | — | -55°C to +150°C |
| Integrated Body Diode | — | Yes - ultra-fast CoolMOS CFD7 diode |
| Lead-Free | — | Yes |
| Target Applications | — | Soft-switching topologies (ZVS phase-shift full-bridge, LLC) |