IRFS3006TRL7PP vs IPB60R040CFD7ATMA1 对比

详细并排对比 IRFS3006TRL7PP 出自 Infineon 和 IPB60R040CFD7ATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IPB60R040CFD7ATMA1 IPB60R040CFD7ATMA1 - 600V 50A 40mΩ CoolMOS CFD7 MOSFET | Infineon

IPB60R040CFD7ATMA1 - 600V 50A 40mΩ CoolMOS CFD7 MOSFET | Infineon

IPB60R040CFD7ATMA1 ✓ 量产中

规格对比

参数 IRFS3006TRL7PP IPB60R040CFD7ATMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $1.75 $5.19
晶体管类型 N-Channel MOSFET —
Technology HEXFET (IR MOSFET™ planar) Superjunction (SJ) N-Channel MOSFET
Drain-Source Voltage (VDS) 60 V 600 V
Continuous Drain Current (ID) at Tc 240 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current rating] [DATA_NEEDED: pulsed drain current]
On-Resistance RDS(on) max 2.1 mΩ (per Mouser snippet) —
On-Resistance RDS(on) typ 1.5 mΩ —
Gate Charge (Qg) 200 nC (typical) —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical/min/max] —
Power Dissipation (PD) at Tc 375 W —
工作结温 -55 °C to +175 °C —
封装 D2PAK (TO-263), 7-Lead, Surface Mount PG-TO263-3-2 (D2PAK)
安装类型 Surface Mount Surface Mount
Body Diode Intrinsic, avalanche-rated —
MSL 等级 1 (unlimited) 1
RoHS 状态 Compliant Compliant
Avalanche Energy (EAS) [DATA_NEEDED: single-pulse avalanche energy] —
RθJC Thermal Resistance [DATA_NEEDED: junction-to-case thermal resistance] —
Manufacturer — Infineon Technologies
Product Family — CoolMOS CFD7
Continuous Drain Current (ID, Tc=25°C) — 50 A
On-Resistance RDS(on) max @ VGS=10V — 40 mΩ
Gate Threshold Voltage VGS(th) typ — 4 V
Total Gate Charge Qg typ — [DATA_NEEDED: Qg]
功耗(TC=25°C) — 227 W
工作温度范围 — -55°C to +150°C
Integrated Body Diode — Yes - ultra-fast CoolMOS CFD7 diode
Lead-Free — Yes
Target Applications — Soft-switching topologies (ZVS phase-shift full-bridge, LLC)

数据手册与资源

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