IRFS3107TRL7PP vs IRFS3306TRLPBF Vergleich

Detaillierter Direktvergleich von IRFS3107TRL7PP von Infineon und IRFS3306TRLPBF von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter IRFS3107TRL7PP IRFS3306TRLPBF
Marke Infineon Infineon
Kategorie MOSFETs MOSFETs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $0,85 $1,12
FET Type N-Channel MOSFET N-Channel MOSFET, Metal Oxide
Technology IR HEXFET (Planar DMOS) IR MOSFET™ (HEXFET-style planar stripe)
Drain-Source Voltage (VDS) Max 75 V —
Continuous Drain Current (ID) @ Tc=25C 240 A (DigiKey) / 195 A (per package datasheet snippet) —
Gepulster Drain-Strom [DATA_NEEDED: pulsed ID] —
RDS(on) Max @ VGS=10V 3 mOhm (Infineon) / 2.6 mOhm (Mouser) 4.2 mΩ
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical range] 2.0 V to 4.0 V (typical range)
Gate Charge (Qg) Typical 160 nC —
Maximum Power Dissition @ Tc=25C 370 W —
Betriebstemperaturbereich -55C to +175C (junction) -55 °C to +175 °C (junction)
Gehäuse D2PAK-7 (TO-263CB, 6 leads + tab) D2PAK (TO-263), surface mount
Montageart Surface Mount Surface Mount
RoHS-Status Compliant Compliant
Lead-Free Yes —
MSL-Level [DATA_NEEDED: MSL rating] —
Drain-to-Source Voltage (VDS) — 60 V
Continuous Drain Current (ID) @ Tc=25°C — 120 A (Infineon datasheet; 160 A pulsed per IR datasheet family)
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
Total Gate Charge (Qg) — 85 nC
Power Dissipation (PD) @ Tc=25°C — 230 W
Lead-Free / Halogen-Free — Yes (PbF, Halogen-Free per Infineon datasheet)
Tape & Reel Packaging — 13-inch reel, 800 pcs/reel typical
Body Diode dV/dt Capability — Enhanced (per Infineon datasheet feature)

Datenblätter & Ressourcen

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