IRFS4321TRLPBF vs IRFS4620TRLPBF Vergleich
Detaillierter Direktvergleich von IRFS4321TRLPBF von Infineon und IRFS4620TRLPBF von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IRFS4321TRLPBF | IRFS4620TRLPBF |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $1,73 | $1,62 |
| FET Type | N-Channel MOSFET, Metal Oxide | N-Channel MOSFET |
| Drain-to-Source Voltage (VDS) | 150 V | 200 V |
| Continuous Drain Current (ID) at Tc=25C | 85 A | — |
| Continuous Drain Current (ID) at Tc=100C | [DATA_NEEDED: ID at Tc=100C] | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: pulsed drain current] |
| RDS(on) Max at VGS=10V | 15 mOhm | — |
| RDS(on) Max at VGS=4.5V | [DATA_NEEDED: RDS(on) at VGS=4.5V] | — |
| Gate-to-Source Voltage (VGS) Max | ±20 V | — |
| Gate Threshold Voltage (VGS(th)) Typ | [DATA_NEEDED: VGS(th) typical] | — |
| Total Gate Charge (Qg) Typ | 71 nC | — |
| Total Gate Charge (Qg) Max | 110 nC | — |
| Power Dissipation (PD) at Tc=25C | 350 W | — |
| Thermal Resistance Junction-to-Case (RθJC) Max | 0.45 C/W | — |
| Thermal Resistance Junction-to-Case (RθJC) End-of-Life | 0.65 C/W (after 1000 cycles -55C to +150C) | — |
| Betriebs-Sperrschichttemperatur | -55C to +175C | -55°C to +175°C |
| Gehäuse | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | D2PAK (TO-263AB), 3-pin (2 leads + tab) |
| Montageart | Surface Mount | Surface Mount |
| Technology | IR HEXFET (IR MOSFET) | IR MOSFET™ |
| RoHS-Status | Compliant | Compliant |
| Continuous Drain Current (ID) at TC=25°C | — | 24 A |
| On-Resistance RDS(on) max at VGS=10V | — | 77.5 mΩ |
| On-Resistance RDS(on) max at VGS=4.5V | — | [DATA_NEEDED: RDS(on) at VGS=4.5V] |
| Gate Threshold Voltage VGS(th) | — | [DATA_NEEDED: VGS(th) typical/range] |
| Total Gate Charge Qg | — | 25 nC (typical) |
| Gate-to-Source Charge Qgs | — | [DATA_NEEDED: Qgs] |
| Gate-to-Drain Charge Qgd | — | [DATA_NEEDED: Qgd] |
| Power Dissipation PD at TC=25°C | — | 144 W |
| Lead-Free | — | Yes |
| MSL-Level | — | 1 (per JEDEC J-STD-020) |