IRFS4321TRLPBF vs IRFS4620TRLPBF Comparación
Comparación detallada lado a lado de IRFS4321TRLPBF por Infineon y IRFS4620TRLPBF por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | IRFS4321TRLPBF | IRFS4620TRLPBF |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $1,73 | $1,62 |
| FET Type | N-Channel MOSFET, Metal Oxide | N-Channel MOSFET |
| Drain-to-Source Voltage (VDS) | 150 V | 200 V |
| Continuous Drain Current (ID) at Tc=25C | 85 A | — |
| Continuous Drain Current (ID) at Tc=100C | [DATA_NEEDED: ID at Tc=100C] | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: pulsed drain current] |
| RDS(on) Max at VGS=10V | 15 mOhm | — |
| RDS(on) Max at VGS=4.5V | [DATA_NEEDED: RDS(on) at VGS=4.5V] | — |
| Gate-to-Source Voltage (VGS) Max | ±20 V | — |
| Gate Threshold Voltage (VGS(th)) Typ | [DATA_NEEDED: VGS(th) typical] | — |
| Total Gate Charge (Qg) Typ | 71 nC | — |
| Total Gate Charge (Qg) Max | 110 nC | — |
| Power Dissipation (PD) at Tc=25C | 350 W | — |
| Thermal Resistance Junction-to-Case (RθJC) Max | 0.45 C/W | — |
| Thermal Resistance Junction-to-Case (RθJC) End-of-Life | 0.65 C/W (after 1000 cycles -55C to +150C) | — |
| Temperatura de unión de funcionamiento | -55C to +175C | -55°C to +175°C |
| Encapsulado | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | D2PAK (TO-263AB), 3-pin (2 leads + tab) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Technology | IR HEXFET (IR MOSFET) | IR MOSFET™ |
| Estado RoHS | Compliant | Compliant |
| Continuous Drain Current (ID) at TC=25°C | — | 24 A |
| On-Resistance RDS(on) max at VGS=10V | — | 77.5 mΩ |
| On-Resistance RDS(on) max at VGS=4.5V | — | [DATA_NEEDED: RDS(on) at VGS=4.5V] |
| Gate Threshold Voltage VGS(th) | — | [DATA_NEEDED: VGS(th) typical/range] |
| Total Gate Charge Qg | — | 25 nC (typical) |
| Gate-to-Source Charge Qgs | — | [DATA_NEEDED: Qgs] |
| Gate-to-Drain Charge Qgd | — | [DATA_NEEDED: Qgd] |
| Power Dissipation PD at TC=25°C | — | 144 W |
| Lead-Free | — | Yes |
| Nivel MSL | — | 1 (per JEDEC J-STD-020) |