IRFS4321TRLPBF vs IRFS4620TRLPBF Comparison
Detailed side-by-side comparison of IRFS4321TRLPBF by Infineon and IRFS4620TRLPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IRFS4321TRLPBF | IRFS4620TRLPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.73 | $1.62 |
| FET Type | N-Channel MOSFET, Metal Oxide | N-Channel MOSFET |
| Drain-to-Source Voltage (VDS) | 150 V | 200 V |
| Continuous Drain Current (ID) at Tc=25C | 85 A | β |
| Continuous Drain Current (ID) at Tc=100C | [DATA_NEEDED: ID at Tc=100C] | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: pulsed drain current] |
| RDS(on) Max at VGS=10V | 15 mOhm | β |
| RDS(on) Max at VGS=4.5V | [DATA_NEEDED: RDS(on) at VGS=4.5V] | β |
| Gate-to-Source Voltage (VGS) Max | Β±20 V | β |
| Gate Threshold Voltage (VGS(th)) Typ | [DATA_NEEDED: VGS(th) typical] | β |
| Total Gate Charge (Qg) Typ | 71 nC | β |
| Total Gate Charge (Qg) Max | 110 nC | β |
| Power Dissipation (PD) at Tc=25C | 350 W | β |
| Thermal Resistance Junction-to-Case (RΞΈJC) Max | 0.45 C/W | β |
| Thermal Resistance Junction-to-Case (RΞΈJC) End-of-Life | 0.65 C/W (after 1000 cycles -55C to +150C) | β |
| Operating Junction Temperature | -55C to +175C | -55Β°C to +175Β°C |
| Package | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | D2PAK (TO-263AB), 3-pin (2 leads + tab) |
| Mounting Type | Surface Mount | Surface Mount |
| Technology | IR HEXFET (IR MOSFET) | IR MOSFETβ’ |
| RoHS Status | Compliant | Compliant |
| Continuous Drain Current (ID) at TC=25Β°C | β | 24 A |
| On-Resistance RDS(on) max at VGS=10V | β | 77.5 mΞ© |
| On-Resistance RDS(on) max at VGS=4.5V | β | [DATA_NEEDED: RDS(on) at VGS=4.5V] |
| Gate Threshold Voltage VGS(th) | β | [DATA_NEEDED: VGS(th) typical/range] |
| Total Gate Charge Qg | β | 25 nC (typical) |
| Gate-to-Source Charge Qgs | β | [DATA_NEEDED: Qgs] |
| Gate-to-Drain Charge Qgd | β | [DATA_NEEDED: Qgd] |
| Power Dissipation PD at TC=25Β°C | β | 144 W |
| Lead-Free | β | Yes |
| MSL Level | β | 1 (per JEDEC J-STD-020) |