IRFS4321TRLPBF vs IRFS4620TRLPBF 비교

다음의 상세 나란히 비교: IRFS4321TRLPBF 제조: Infineon 및 IRFS4620TRLPBF 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

Infineon
IRFS4620TRLPBF IRFS4620TRLPBF - 200V 24A N-Channel MOSFET | Infineon

IRFS4620TRLPBF - 200V 24A N-Channel MOSFET | Infineon

IRFS4620TRLPBF ✓ 활성

사양 비교

파라미터 IRFS4321TRLPBF IRFS4620TRLPBF
브랜드 Infineon Infineon
카테고리 MOSFETs MOSFETs
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $1.73 $1.62
FET Type N-Channel MOSFET, Metal Oxide N-Channel MOSFET
Drain-to-Source Voltage (VDS) 150 V 200 V
Continuous Drain Current (ID) at Tc=25C 85 A —
Continuous Drain Current (ID) at Tc=100C [DATA_NEEDED: ID at Tc=100C] —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] [DATA_NEEDED: pulsed drain current]
RDS(on) Max at VGS=10V 15 mOhm —
RDS(on) Max at VGS=4.5V [DATA_NEEDED: RDS(on) at VGS=4.5V] —
Gate-to-Source Voltage (VGS) Max ±20 V —
Gate Threshold Voltage (VGS(th)) Typ [DATA_NEEDED: VGS(th) typical] —
Total Gate Charge (Qg) Typ 71 nC —
Total Gate Charge (Qg) Max 110 nC —
Power Dissipation (PD) at Tc=25C 350 W —
Thermal Resistance Junction-to-Case (RθJC) Max 0.45 C/W —
Thermal Resistance Junction-to-Case (RθJC) End-of-Life 0.65 C/W (after 1000 cycles -55C to +150C) —
동작 접합 온도 -55C to +175C -55°C to +175°C
패키지 TO-263-3, D2PAK (2 Leads + Tab), TO-263AB D2PAK (TO-263AB), 3-pin (2 leads + tab)
실장 유형 Surface Mount Surface Mount
Technology IR HEXFET (IR MOSFET) IR MOSFET™
RoHS 상태 Compliant Compliant
Continuous Drain Current (ID) at TC=25°C — 24 A
On-Resistance RDS(on) max at VGS=10V — 77.5 mΩ
On-Resistance RDS(on) max at VGS=4.5V — [DATA_NEEDED: RDS(on) at VGS=4.5V]
Gate Threshold Voltage VGS(th) — [DATA_NEEDED: VGS(th) typical/range]
Total Gate Charge Qg — 25 nC (typical)
Gate-to-Source Charge Qgs — [DATA_NEEDED: Qgs]
Gate-to-Drain Charge Qgd — [DATA_NEEDED: Qgd]
Power Dissipation PD at TC=25°C — 144 W
Lead-Free — Yes
MSL 레벨 — 1 (per JEDEC J-STD-020)

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