IRFS4321TRRPBF vs IRFS4321TRLPBF Vergleich
Detaillierter Direktvergleich von IRFS4321TRRPBF von Infineon und IRFS4321TRLPBF von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IRFS4321TRRPBF | IRFS4321TRLPBF |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $2,97 | $1,73 |
| FET Type | N-Channel MOSFET | N-Channel MOSFET, Metal Oxide |
| Technology | HEXFET (IR MOSFET) | IR HEXFET (IR MOSFET) |
| Drain-to-Source Voltage (VDS) | 150 V | 150 V |
| Continuous Drain Current (ID) at 25C | 85 A (Tc) | — |
| Continuous Drain Current (ID) at 100C | [DATA_NEEDED: ID at 100C] | — |
| RDS(on) Maximum at VGS=10V | 15 mOhm | — |
| Total Gate Charge (Qg) | 71 nC | — |
| Gate-to-Source Voltage Maximum | +/- 30 V | — |
| Power Dissipation (PD) | 350 W (Tc) | — |
| Betriebs-Sperrschichttemperatur | -55C to +175C | -55C to +175C |
| Thermal Resistance Junction-to-Case (RthJC) | 0.65 C/W (end of life, D2PAK) | — |
| Thermal Resistance Junction-to-Ambient (RthJA) | [DATA_NEEDED: RthJA] | — |
| Gehäuse | D2PAK (TO-263), 3-pin (2+Tab) | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Montageart | Surface Mount | Surface Mount |
| Avalanche Energy Rating | Single-pulse avalanche rated (per datasheet) | — |
| Lead-Free / RoHS Status | Lead-Free (PBF suffix), RoHS Compliant | — |
| MSL-Level | [DATA_NEEDED: MSL Level] | — |
| Continuous Drain Current (ID) at Tc=25C | — | 85 A |
| Continuous Drain Current (ID) at Tc=100C | — | [DATA_NEEDED: ID at Tc=100C] |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| RDS(on) Max at VGS=10V | — | 15 mOhm |
| RDS(on) Max at VGS=4.5V | — | [DATA_NEEDED: RDS(on) at VGS=4.5V] |
| Gate-to-Source Voltage (VGS) Max | — | ±20 V |
| Gate Threshold Voltage (VGS(th)) Typ | — | [DATA_NEEDED: VGS(th) typical] |
| Total Gate Charge (Qg) Typ | — | 71 nC |
| Total Gate Charge (Qg) Max | — | 110 nC |
| Power Dissipation (PD) at Tc=25C | — | 350 W |
| Thermal Resistance Junction-to-Case (RθJC) Max | — | 0.45 C/W |
| Thermal Resistance Junction-to-Case (RθJC) End-of-Life | — | 0.65 C/W (after 1000 cycles -55C to +150C) |
| RoHS-Status | — | Compliant |