IRFS4321TRRPBF vs IRFS4321TRLPBF 비교

다음의 상세 나란히 비교: IRFS4321TRRPBF 제조: Infineon 및 IRFS4321TRLPBF 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

사양 비교

파라미터 IRFS4321TRRPBF IRFS4321TRLPBF
브랜드 Infineon Infineon
카테고리 MOSFETs MOSFETs
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $2.97 $1.73
FET Type N-Channel MOSFET N-Channel MOSFET, Metal Oxide
Technology HEXFET (IR MOSFET) IR HEXFET (IR MOSFET)
Drain-to-Source Voltage (VDS) 150 V 150 V
Continuous Drain Current (ID) at 25C 85 A (Tc) —
Continuous Drain Current (ID) at 100C [DATA_NEEDED: ID at 100C] —
RDS(on) Maximum at VGS=10V 15 mOhm —
Total Gate Charge (Qg) 71 nC —
Gate-to-Source Voltage Maximum +/- 30 V —
Power Dissipation (PD) 350 W (Tc) —
동작 접합 온도 -55C to +175C -55C to +175C
Thermal Resistance Junction-to-Case (RthJC) 0.65 C/W (end of life, D2PAK) —
Thermal Resistance Junction-to-Ambient (RthJA) [DATA_NEEDED: RthJA] —
패키지 D2PAK (TO-263), 3-pin (2+Tab) TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
실장 유형 Surface Mount Surface Mount
Avalanche Energy Rating Single-pulse avalanche rated (per datasheet) —
Lead-Free / RoHS Status Lead-Free (PBF suffix), RoHS Compliant —
MSL 레벨 [DATA_NEEDED: MSL Level] —
Continuous Drain Current (ID) at Tc=25C — 85 A
Continuous Drain Current (ID) at Tc=100C — [DATA_NEEDED: ID at Tc=100C]
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
RDS(on) Max at VGS=10V — 15 mOhm
RDS(on) Max at VGS=4.5V — [DATA_NEEDED: RDS(on) at VGS=4.5V]
Gate-to-Source Voltage (VGS) Max — ±20 V
Gate Threshold Voltage (VGS(th)) Typ — [DATA_NEEDED: VGS(th) typical]
Total Gate Charge (Qg) Typ — 71 nC
Total Gate Charge (Qg) Max — 110 nC
Power Dissipation (PD) at Tc=25C — 350 W
Thermal Resistance Junction-to-Case (RθJC) Max — 0.45 C/W
Thermal Resistance Junction-to-Case (RθJC) End-of-Life — 0.65 C/W (after 1000 cycles -55C to +150C)
RoHS 상태 — Compliant

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