IRFS4321TRRPBF vs IRFS4321TRLPBF Сравнение
Подробное сравнение бок о бок IRFS4321TRRPBF от Infineon и IRFS4321TRLPBF от Infineon. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.
Сравнение характеристик
| Параметр | IRFS4321TRRPBF | IRFS4321TRLPBF |
|---|---|---|
| Бренд | Infineon | Infineon |
| Категория | MOSFETs | MOSFETs |
| Статус жизненного цикла | Активен | Активен |
| Наличие | In Stock | In Stock |
| Цена за единицу (USD) | $2,97 | $1,73 |
| FET Type | N-Channel MOSFET | N-Channel MOSFET, Metal Oxide |
| Technology | HEXFET (IR MOSFET) | IR HEXFET (IR MOSFET) |
| Drain-to-Source Voltage (VDS) | 150 V | 150 V |
| Continuous Drain Current (ID) at 25C | 85 A (Tc) | — |
| Continuous Drain Current (ID) at 100C | [DATA_NEEDED: ID at 100C] | — |
| RDS(on) Maximum at VGS=10V | 15 mOhm | — |
| Total Gate Charge (Qg) | 71 nC | — |
| Gate-to-Source Voltage Maximum | +/- 30 V | — |
| Power Dissipation (PD) | 350 W (Tc) | — |
| Рабочая температура перехода | -55C to +175C | -55C to +175C |
| Thermal Resistance Junction-to-Case (RthJC) | 0.65 C/W (end of life, D2PAK) | — |
| Thermal Resistance Junction-to-Ambient (RthJA) | [DATA_NEEDED: RthJA] | — |
| Корпус | D2PAK (TO-263), 3-pin (2+Tab) | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Тип монтажа | Surface Mount | Surface Mount |
| Avalanche Energy Rating | Single-pulse avalanche rated (per datasheet) | — |
| Lead-Free / RoHS Status | Lead-Free (PBF suffix), RoHS Compliant | — |
| Уровень MSL | [DATA_NEEDED: MSL Level] | — |
| Continuous Drain Current (ID) at Tc=25C | — | 85 A |
| Continuous Drain Current (ID) at Tc=100C | — | [DATA_NEEDED: ID at Tc=100C] |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| RDS(on) Max at VGS=10V | — | 15 mOhm |
| RDS(on) Max at VGS=4.5V | — | [DATA_NEEDED: RDS(on) at VGS=4.5V] |
| Gate-to-Source Voltage (VGS) Max | — | ±20 V |
| Gate Threshold Voltage (VGS(th)) Typ | — | [DATA_NEEDED: VGS(th) typical] |
| Total Gate Charge (Qg) Typ | — | 71 nC |
| Total Gate Charge (Qg) Max | — | 110 nC |
| Power Dissipation (PD) at Tc=25C | — | 350 W |
| Thermal Resistance Junction-to-Case (RθJC) Max | — | 0.45 C/W |
| Thermal Resistance Junction-to-Case (RθJC) End-of-Life | — | 0.65 C/W (after 1000 cycles -55C to +150C) |
| Статус RoHS | — | Compliant |