IRFS4321TRRPBF vs IRFS4321TRLPBF Comparaison
Comparaison détaillée côte à côte de IRFS4321TRRPBF par Infineon et IRFS4321TRLPBF par Infineon. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Comparaison des spécifications
| Paramètre | IRFS4321TRRPBF | IRFS4321TRLPBF |
|---|---|---|
| Marque | Infineon | Infineon |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $2,97 | $1,73 |
| FET Type | N-Channel MOSFET | N-Channel MOSFET, Metal Oxide |
| Technology | HEXFET (IR MOSFET) | IR HEXFET (IR MOSFET) |
| Drain-to-Source Voltage (VDS) | 150 V | 150 V |
| Continuous Drain Current (ID) at 25C | 85 A (Tc) | — |
| Continuous Drain Current (ID) at 100C | [DATA_NEEDED: ID at 100C] | — |
| RDS(on) Maximum at VGS=10V | 15 mOhm | — |
| Total Gate Charge (Qg) | 71 nC | — |
| Gate-to-Source Voltage Maximum | +/- 30 V | — |
| Power Dissipation (PD) | 350 W (Tc) | — |
| Température de jonction en fonctionnement | -55C to +175C | -55C to +175C |
| Thermal Resistance Junction-to-Case (RthJC) | 0.65 C/W (end of life, D2PAK) | — |
| Thermal Resistance Junction-to-Ambient (RthJA) | [DATA_NEEDED: RthJA] | — |
| Boîtier | D2PAK (TO-263), 3-pin (2+Tab) | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Type de montage | Surface Mount | Surface Mount |
| Avalanche Energy Rating | Single-pulse avalanche rated (per datasheet) | — |
| Lead-Free / RoHS Status | Lead-Free (PBF suffix), RoHS Compliant | — |
| Niveau MSL | [DATA_NEEDED: MSL Level] | — |
| Continuous Drain Current (ID) at Tc=25C | — | 85 A |
| Continuous Drain Current (ID) at Tc=100C | — | [DATA_NEEDED: ID at Tc=100C] |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| RDS(on) Max at VGS=10V | — | 15 mOhm |
| RDS(on) Max at VGS=4.5V | — | [DATA_NEEDED: RDS(on) at VGS=4.5V] |
| Gate-to-Source Voltage (VGS) Max | — | ±20 V |
| Gate Threshold Voltage (VGS(th)) Typ | — | [DATA_NEEDED: VGS(th) typical] |
| Total Gate Charge (Qg) Typ | — | 71 nC |
| Total Gate Charge (Qg) Max | — | 110 nC |
| Power Dissipation (PD) at Tc=25C | — | 350 W |
| Thermal Resistance Junction-to-Case (RθJC) Max | — | 0.45 C/W |
| Thermal Resistance Junction-to-Case (RθJC) End-of-Life | — | 0.65 C/W (after 1000 cycles -55C to +150C) |
| Statut RoHS | — | Compliant |