IRFS52N15DPBF vs IRFB52N15DPBF Vergleich

Detaillierter Direktvergleich von IRFS52N15DPBF von Infineon und IRFB52N15DPBF von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter IRFS52N15DPBF IRFB52N15DPBF
Marke Infineon Infineon
Kategorie MOSFETs MOSFETs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $2,15 $1,65
FET Type N-Channel —
Technology HEXFET (Planar Cell) HEXFET (vertical DMOS, hexagonal cell)
Drain-Source Voltage (VDS) 150 V —
Continuous Drain Current (ID) @ TC=25C 51 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: IDM] 204 A
Gate-Source Voltage (VGS) [DATA_NEEDED: VGS max] —
RDS(on) max @ VGS=10V 32 mOhm —
Total Gate Charge (Qg) 60 nC (typical) 60 nC (typical)
Gate-Source Charge (Qgs) [DATA_NEEDED: Qgs] —
Gate-Drain Charge (Qgd) [DATA_NEEDED: Qgd] —
Input Capacitance (Ciss) [DATA_NEEDED: Ciss] —
Output Capacitance (Coss) [DATA_NEEDED: Coss] —
Reverse Transfer Capacitance (Crss) [DATA_NEEDED: Crss] —
Power Dissipation (PD) @ TA=25C 3.8 W —
Power Dissipation (PD) @ TC=25C 230 W —
Betriebs-Sperrschichttemperatur -55C to +175C -55 C to +175 C
Gehäuse D2PAK (TO-263) Surface Mount —
Montageart Surface Mount Through Hole
Qualification Standard JEDEC Industrial market (per IR/Infineon)
MSL-Level 1 (per JEDEC J-STD-020) —
Lead-Free Yes —
RoHS-Status Compliant Compliant
Drain-Source Voltage (V(BR)DSS) — 150 V
Continuous Drain Current (ID) at TC=25C — 51 A
Gate Threshold Voltage (VGS(th)) — 2.0 V to 4.0 V
Static Drain-Source On-Resistance (RDS(on)) — 32 mOhm at VGS=10V
Power Dissipation (PD) at TC=25C — 230 W
Power Dissipation (PD) at TA=25C — 3.8 W
Package Type — TO-220AB (through-hole)
Polarity / Channel Type — N-Channel Enhancement Mode
Lead-Free Finish — Yes (Pb-free PBF suffix)

Datenblätter & Ressourcen

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