IRFS52N15DPBF vs IRFB52N15DPBF 비교
다음의 상세 나란히 비교: IRFS52N15DPBF 제조: Infineon 및 IRFB52N15DPBF 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | IRFS52N15DPBF | IRFB52N15DPBF |
|---|---|---|
| 브랜드 | Infineon | Infineon |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $2.15 | $1.65 |
| FET Type | N-Channel | — |
| Technology | HEXFET (Planar Cell) | HEXFET (vertical DMOS, hexagonal cell) |
| Drain-Source Voltage (VDS) | 150 V | — |
| Continuous Drain Current (ID) @ TC=25C | 51 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM] | 204 A |
| Gate-Source Voltage (VGS) | [DATA_NEEDED: VGS max] | — |
| RDS(on) max @ VGS=10V | 32 mOhm | — |
| Total Gate Charge (Qg) | 60 nC (typical) | 60 nC (typical) |
| Gate-Source Charge (Qgs) | [DATA_NEEDED: Qgs] | — |
| Gate-Drain Charge (Qgd) | [DATA_NEEDED: Qgd] | — |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss] | — |
| Output Capacitance (Coss) | [DATA_NEEDED: Coss] | — |
| Reverse Transfer Capacitance (Crss) | [DATA_NEEDED: Crss] | — |
| Power Dissipation (PD) @ TA=25C | 3.8 W | — |
| Power Dissipation (PD) @ TC=25C | 230 W | — |
| 동작 접합 온도 | -55C to +175C | -55 C to +175 C |
| 패키지 | D2PAK (TO-263) Surface Mount | — |
| 실장 유형 | Surface Mount | Through Hole |
| Qualification Standard | JEDEC | Industrial market (per IR/Infineon) |
| MSL 레벨 | 1 (per JEDEC J-STD-020) | — |
| Lead-Free | Yes | — |
| RoHS 상태 | Compliant | Compliant |
| Drain-Source Voltage (V(BR)DSS) | — | 150 V |
| Continuous Drain Current (ID) at TC=25C | — | 51 A |
| Gate Threshold Voltage (VGS(th)) | — | 2.0 V to 4.0 V |
| Static Drain-Source On-Resistance (RDS(on)) | — | 32 mOhm at VGS=10V |
| Power Dissipation (PD) at TC=25C | — | 230 W |
| Power Dissipation (PD) at TA=25C | — | 3.8 W |
| Package Type | — | TO-220AB (through-hole) |
| Polarity / Channel Type | — | N-Channel Enhancement Mode |
| Lead-Free Finish | — | Yes (Pb-free PBF suffix) |