IRFS52N15DPBF vs IRFB52N15DPBF Comparación
Comparación detallada lado a lado de IRFS52N15DPBF por Infineon y IRFB52N15DPBF por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | IRFS52N15DPBF | IRFB52N15DPBF |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $2,15 | $1,65 |
| FET Type | N-Channel | — |
| Technology | HEXFET (Planar Cell) | HEXFET (vertical DMOS, hexagonal cell) |
| Drain-Source Voltage (VDS) | 150 V | — |
| Continuous Drain Current (ID) @ TC=25C | 51 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM] | 204 A |
| Gate-Source Voltage (VGS) | [DATA_NEEDED: VGS max] | — |
| RDS(on) max @ VGS=10V | 32 mOhm | — |
| Total Gate Charge (Qg) | 60 nC (typical) | 60 nC (typical) |
| Gate-Source Charge (Qgs) | [DATA_NEEDED: Qgs] | — |
| Gate-Drain Charge (Qgd) | [DATA_NEEDED: Qgd] | — |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss] | — |
| Output Capacitance (Coss) | [DATA_NEEDED: Coss] | — |
| Reverse Transfer Capacitance (Crss) | [DATA_NEEDED: Crss] | — |
| Power Dissipation (PD) @ TA=25C | 3.8 W | — |
| Power Dissipation (PD) @ TC=25C | 230 W | — |
| Temperatura de unión de funcionamiento | -55C to +175C | -55 C to +175 C |
| Encapsulado | D2PAK (TO-263) Surface Mount | — |
| Tipo de montaje | Surface Mount | Through Hole |
| Qualification Standard | JEDEC | Industrial market (per IR/Infineon) |
| Nivel MSL | 1 (per JEDEC J-STD-020) | — |
| Lead-Free | Yes | — |
| Estado RoHS | Compliant | Compliant |
| Drain-Source Voltage (V(BR)DSS) | — | 150 V |
| Continuous Drain Current (ID) at TC=25C | — | 51 A |
| Gate Threshold Voltage (VGS(th)) | — | 2.0 V to 4.0 V |
| Static Drain-Source On-Resistance (RDS(on)) | — | 32 mOhm at VGS=10V |
| Power Dissipation (PD) at TC=25C | — | 230 W |
| Power Dissipation (PD) at TA=25C | — | 3.8 W |
| Package Type | — | TO-220AB (through-hole) |
| Polarity / Channel Type | — | N-Channel Enhancement Mode |
| Lead-Free Finish | — | Yes (Pb-free PBF suffix) |