IRFZ48NSTRLPBF vs IRLB4030PBF Vergleich
Detaillierter Direktvergleich von IRFZ48NSTRLPBF von Infineon und IRLB4030PBF von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IRFZ48NSTRLPBF | IRLB4030PBF |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $1,18 | $3,10 |
| FET Type | N-Channel Power MOSFET | — |
| Drain-to-Source Voltage (VDS) | 55 V | 100 V |
| Continuous Drain Current (ID) @ Tc=25C | 64 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: pulsed drain current value] |
| Static Drain-to-Source On-Resistance (Rds(on)) | 14 mΩ at VGS = 10 V | — |
| Gate-to-Source Threshold Voltage (VGS(th)) | 2.0 V to 4.0 V | — |
| Total Gate Charge (Qg) | 54 nC | 87 nC |
| Gate-to-Source Voltage (VGS) max | ±20 V | [DATA_NEEDED: VGS absolute maximum, typical +/- 20 V] |
| Power Dissipation (Pd) @ Tc=25C | 130 W | — |
| Power Dissipation (Pd) @ Ta=25C on FR-4 | 3.8 W | — |
| Betriebs-Sperrschichttemperatur | -55C to +175C | — |
| Gehäuse | D2PAK (TO-263) Surface Mount | TO-220AB |
| Montageart | Surface Mount | Through Hole |
| Packaging | Tape & Reel (13-inch reel, TRL) | — |
| Lead Finish | Lead-free (PBF) matte tin | — |
| RoHS-Status | Compliant | Compliant |
| Technology Family | HEXFET advanced process technology | — |
| Transistortyp | — | N-Channel MOSFET |
| Continuous Drain Current (ID) at Tc | — | 180 A |
| On-Resistance RDS(on) max at VGS=10V | — | 4.3 mOhm |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: gate threshold voltage] |
| Power Dissipation (PD) at Tc | — | 370 W |
| Betriebstemperaturbereich | — | -55C to +175C |
| Technology | — | HEXFET (StrongIRFET family) |
| Logic Level Drive | — | Yes (optimized for 4.5 V to 10 V VGS) |
| Qualification | — | JEDEC |