IRFZ48NSTRLPBF vs IRLB4030PBF 비교
다음의 상세 나란히 비교: IRFZ48NSTRLPBF 제조: Infineon 및 IRLB4030PBF 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | IRFZ48NSTRLPBF | IRLB4030PBF |
|---|---|---|
| 브랜드 | Infineon | Infineon |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $1.18 | $3.10 |
| FET Type | N-Channel Power MOSFET | — |
| Drain-to-Source Voltage (VDS) | 55 V | 100 V |
| Continuous Drain Current (ID) @ Tc=25C | 64 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: pulsed drain current value] |
| Static Drain-to-Source On-Resistance (Rds(on)) | 14 mΩ at VGS = 10 V | — |
| Gate-to-Source Threshold Voltage (VGS(th)) | 2.0 V to 4.0 V | — |
| Total Gate Charge (Qg) | 54 nC | 87 nC |
| Gate-to-Source Voltage (VGS) max | ±20 V | [DATA_NEEDED: VGS absolute maximum, typical +/- 20 V] |
| Power Dissipation (Pd) @ Tc=25C | 130 W | — |
| Power Dissipation (Pd) @ Ta=25C on FR-4 | 3.8 W | — |
| 동작 접합 온도 | -55C to +175C | — |
| 패키지 | D2PAK (TO-263) Surface Mount | TO-220AB |
| 실장 유형 | Surface Mount | Through Hole |
| Packaging | Tape & Reel (13-inch reel, TRL) | — |
| Lead Finish | Lead-free (PBF) matte tin | — |
| RoHS 상태 | Compliant | Compliant |
| Technology Family | HEXFET advanced process technology | — |
| 트랜지스터 유형 | — | N-Channel MOSFET |
| Continuous Drain Current (ID) at Tc | — | 180 A |
| On-Resistance RDS(on) max at VGS=10V | — | 4.3 mOhm |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: gate threshold voltage] |
| Power Dissipation (PD) at Tc | — | 370 W |
| 동작 온도 범위 | — | -55C to +175C |
| Technology | — | HEXFET (StrongIRFET family) |
| Logic Level Drive | — | Yes (optimized for 4.5 V to 10 V VGS) |
| Qualification | — | JEDEC |