IRL40S212ARMA1 vs IPD034N06N3GATMA1 Vergleich
Detaillierter Direktvergleich von IRL40S212ARMA1 von Infineon und IPD034N06N3GATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IRL40S212ARMA1 | IPD034N06N3GATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $2,31 | $0,51 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Family | StrongIRFET™ | — |
| Transistortyp | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 40 V | 60 V |
| Continuous Drain Current (ID, Tc) | 195 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| On-Resistance (RDS(on)) | 1.9 mOhm max | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max] | [DATA_NEEDED: max VGS rating] |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typ] | — |
| Power Dissipation (PD, Tc) | 231 W | — |
| Betriebstemperaturbereich | [DATA_NEEDED: Tj max] | [DATA_NEEDED: Tj min/max] |
| Gehäuse | PG-TO263-3 (D2PAK) | PG-TO252-3 (DPAK) |
| Montageart | Surface Mount | Surface Mount |
| Technology | StrongIRFET™ (planar N-channel) | N-Channel Trench MOSFET (OptiMOS 3) |
| RoHS-Status | Compliant | Compliant (Pb-free green finish) |
| Lead-Free | Yes | — |
| MSL-Level | 1 (unlimited) | [DATA_NEEDED: MSL rating] |
| Series | — | OptiMOS 3 |
| Continuous Drain Current (ID) at Tc | — | 100 A |
| Maximum Power Dissipation (Ptot) | — | 167 W |
| On-Resistance RDS(on) max at VGS=10V | — | 3.4 mOhm |
| Gate Threshold Voltage VGS(th) | — | 4 V at 93 uA |
| Pin Configuration | — | 3-Pin (2 + Tab) |
| Automotive Qualified | — | Yes (per Infineon product page) |