IRL40S212ARMA1 vs IPD034N06N3GATMA1 Comparación
Comparación detallada lado a lado de IRL40S212ARMA1 por Infineon y IPD034N06N3GATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | IRL40S212ARMA1 | IPD034N06N3GATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $2,31 | $0,51 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Family | StrongIRFET™ | — |
| Tipo de transistor | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 40 V | 60 V |
| Continuous Drain Current (ID, Tc) | 195 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| On-Resistance (RDS(on)) | 1.9 mOhm max | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max] | [DATA_NEEDED: max VGS rating] |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typ] | — |
| Power Dissipation (PD, Tc) | 231 W | — |
| Rango de temperatura de funcionamiento | [DATA_NEEDED: Tj max] | [DATA_NEEDED: Tj min/max] |
| Encapsulado | PG-TO263-3 (D2PAK) | PG-TO252-3 (DPAK) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Technology | StrongIRFET™ (planar N-channel) | N-Channel Trench MOSFET (OptiMOS 3) |
| Estado RoHS | Compliant | Compliant (Pb-free green finish) |
| Lead-Free | Yes | — |
| Nivel MSL | 1 (unlimited) | [DATA_NEEDED: MSL rating] |
| Series | — | OptiMOS 3 |
| Continuous Drain Current (ID) at Tc | — | 100 A |
| Maximum Power Dissipation (Ptot) | — | 167 W |
| On-Resistance RDS(on) max at VGS=10V | — | 3.4 mOhm |
| Gate Threshold Voltage VGS(th) | — | 4 V at 93 uA |
| Pin Configuration | — | 3-Pin (2 + Tab) |
| Automotive Qualified | — | Yes (per Infineon product page) |