IRLHS6242TRPBF vs IRLML2803TRPBF Vergleich
Detaillierter Direktvergleich von IRLHS6242TRPBF von Infineon und IRLML2803TRPBF von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IRLHS6242TRPBF | IRLML2803TRPBF |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,12 | $0,13 |
| FET Type | N-Channel | — |
| Technology | HEXFET (trench MOSFET) | IR MOSFET Generation V |
| Drain-to-Source Voltage (VDS) | 20 V | — |
| Gate-to-Source Voltage (VGS) | ±12 V | — |
| Continuous Drain Current (TA) | 10 A | — |
| Continuous Drain Current (TC) | 12 A | — |
| On-Resistance RDS(on) max @ VGS=4.5V | 11.7 mΩ | — |
| Total Gate Charge (Qg) | 14 nC | — |
| Power Dissipation (TA) | 1.98 W | — |
| Power Dissipation (TC) | 9.6 W | — |
| Gehäuse | 6-PQFN (2x2) / DFN2020 with exposed pad | Micro3 / SOT-23 (3-pin) |
| Montageart | Surface Mount | Surface Mount |
| Betriebstemperatur | -55°C to +150°C | — |
| Gate Drive Level | Logic-level (4.5V); 2.5V-capable | Logic-level (driven from 3.3V / 5V) |
| Qualification | JEDEC standard | — |
| Manufacturer | — | Infineon Technologies |
| Part Number | — | IRLML2803TRPBF |
| Transistortyp | — | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | — | 30 V |
| Continuous Drain Current (ID) at TA=25C | — | 1.2 A |
| On-Resistance RDS(on) at VGS=4.5V | — | 250 mOhm maximum |
| Gate-Source Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: typical VGS(th)] |
| Gate Charge (Qg) | — | 3.3 nC typical |
| Power Dissipation (PD) at TA=25C | — | 540 mW |
| Betriebstemperaturbereich | — | -55C to +150C (TJ) |
| MSL-Level | — | 1 |
| RoHS Compliance | — | Compliant, Halogen-Free |