IRLHS6242TRPBF vs IRLML2803TRPBF Comparison

Detailed side-by-side comparison of IRLHS6242TRPBF by Infineon and IRLML2803TRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IRLHS6242TRPBF

IRLHS6242TRPBF - 20V N-CH HEXFET MOSFET, 11.7mΞ© | Infineon

IRLHS6242TRPBF βœ“ Active
Infineon
IRLML2803TRPBF IRLML2803TRPBF - 30V N-Ch MOSFET, 1.2A, SOT-23 | Infineon

IRLML2803TRPBF - 30V N-Ch MOSFET, 1.2A, SOT-23 | Infineon

IRLML2803TRPBF βœ“ Active

Specification Comparison

Parameter IRLHS6242TRPBF IRLML2803TRPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.12 $0.13
FET Type N-Channel β€”
Technology HEXFET (trench MOSFET) IR MOSFET Generation V
Drain-to-Source Voltage (VDS) 20 V β€”
Gate-to-Source Voltage (VGS) Β±12 V β€”
Continuous Drain Current (TA) 10 A β€”
Continuous Drain Current (TC) 12 A β€”
On-Resistance RDS(on) max @ VGS=4.5V 11.7 mΞ© β€”
Total Gate Charge (Qg) 14 nC β€”
Power Dissipation (TA) 1.98 W β€”
Power Dissipation (TC) 9.6 W β€”
Package 6-PQFN (2x2) / DFN2020 with exposed pad Micro3 / SOT-23 (3-pin)
Mounting Type Surface Mount Surface Mount
Operating Temperature -55Β°C to +150Β°C β€”
Gate Drive Level Logic-level (4.5V); 2.5V-capable Logic-level (driven from 3.3V / 5V)
Qualification JEDEC standard β€”
Manufacturer β€” Infineon Technologies
Part Number β€” IRLML2803TRPBF
Transistor Type β€” N-Channel MOSFET
Drain-Source Voltage (VDS) β€” 30 V
Continuous Drain Current (ID) at TA=25C β€” 1.2 A
On-Resistance RDS(on) at VGS=4.5V β€” 250 mOhm maximum
Gate-Source Threshold Voltage (VGS(th)) β€” [DATA_NEEDED: typical VGS(th)]
Gate Charge (Qg) β€” 3.3 nC typical
Power Dissipation (PD) at TA=25C β€” 540 mW
Operating Temperature Range β€” -55C to +150C (TJ)
MSL Level β€” 1
RoHS Compliance β€” Compliant, Halogen-Free

Datasheets & Resources

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