IRLHS6242TRPBF vs IRLML2803TRPBF Comparison
Detailed side-by-side comparison of IRLHS6242TRPBF by Infineon and IRLML2803TRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IRLHS6242TRPBF | IRLML2803TRPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| FET Type | N-Channel | — |
| Technology | HEXFET (trench MOSFET) | IR MOSFET Generation V |
| Drain-to-Source Voltage (VDS) | 20 V | — |
| Gate-to-Source Voltage (VGS) | ±12 V | — |
| Continuous Drain Current (TA) | 10 A | — |
| Continuous Drain Current (TC) | 12 A | — |
| On-Resistance RDS(on) max @ VGS=4.5V | 11.7 mΩ | — |
| Total Gate Charge (Qg) | 14 nC | — |
| Power Dissipation (TA) | 1.98 W | — |
| Power Dissipation (TC) | 9.6 W | — |
| Package | 6-PQFN (2x2) / DFN2020 with exposed pad | Micro3 / SOT-23 (3-pin) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature | -55°C to +150°C | — |
| Gate Drive Level | Logic-level (4.5V); 2.5V-capable | Logic-level (driven from 3.3V / 5V) |
| Qualification | JEDEC standard | — |
| Manufacturer | — | Infineon Technologies |
| Part Number | — | IRLML2803TRPBF |
| Transistor Type | — | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | — | 30 V |
| Continuous Drain Current (ID) at TA=25C | — | 1.2 A |
| On-Resistance RDS(on) at VGS=4.5V | — | 250 mOhm maximum |
| Gate-Source Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: typical VGS(th)] |
| Gate Charge (Qg) | — | 3.3 nC typical |
| Power Dissipation (PD) at TA=25C | — | 540 mW |
| Operating Temperature Range | — | -55C to +150C (TJ) |
| MSL Level | — | 1 |
| RoHS Compliance | — | Compliant, Halogen-Free |