IRLML2030TRPBF vs IRLML6346TRPBF Vergleich
Detaillierter Direktvergleich von IRLML2030TRPBF von Infineon und IRLML6346TRPBF von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IRLML2030TRPBF | IRLML6346TRPBF |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,14 | $0,18 |
| Manufacturer | Infineon Technologies | — |
| Part Number | IRLML2030TRPBF | — |
| FET Type | N-Channel | — |
| Technology | HEXFET (IR MOSFET) | HEXFET Power MOSFET |
| Drain-Source Voltage (VDS) | 30 V | 30 V |
| Continuous Drain Current (ID) at Ta | 2.7 A | — |
| Power Dissipation (PD) at Ta | 1.3 W | — |
| On-Resistance RDS(on) max @ VGS=10V | 100 mOhm | — |
| On-Resistance RDS(on) max @ VGS=4.5V | 154 mOhm | — |
| Gate-Source Voltage (VGS) max | +/-20 V | — |
| Gate Charge (Qg) typ | 1.0 nC | — |
| Gehäuse | Micro3 (SOT-23) | Micro3 / SOT-23 |
| Montageart | Surface Mount | Surface Mount |
| Betriebstemperatur | -55C to +150C (junction) | — |
| MSL-Level | MSL 1 | 1 |
| RoHS Compliance | Yes (lead-free, halogen-free) | — |
| Qualification | JEDEC standard | — |
| Soldering | Wave-solder compatible | — |
| Polarity | — | N-Channel |
| Continuous Drain Current (ID) | — | 3.4 A (TA=25C) |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| RDS(on) max @ VGS=2.5V | — | 63 mOhm |
| RDS(on) max @ VGS=4.5V | — | [DATA_NEEDED: RDS(on) at VGS=4.5V] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) value] |
| Gate Drive Capability | — | 2.5V logic-level |
| Maximum Power Dissipation (PD) | — | 1.3 W (TA=25C, 1in2 FR4) |
| Betriebs-Sperrschichttemperatur | — | -55C to +150C |
| Lead-Free Finish | — | Yes (PBF suffix) |
| RoHS-Status | — | Compliant |