IRLML2803TRPBF vs IRLHS6242TRPBF Vergleich
Detaillierter Direktvergleich von IRLML2803TRPBF von Infineon und IRLHS6242TRPBF von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IRLML2803TRPBF | IRLHS6242TRPBF |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,13 | $0,12 |
| Manufacturer | Infineon Technologies | — |
| Part Number | IRLML2803TRPBF | — |
| Transistortyp | N-Channel MOSFET | — |
| Technology | IR MOSFET Generation V | HEXFET (trench MOSFET) |
| Drain-Source Voltage (VDS) | 30 V | — |
| Continuous Drain Current (ID) at TA=25C | 1.2 A | — |
| On-Resistance RDS(on) at VGS=4.5V | 250 mOhm maximum | — |
| Gate-Source Threshold Voltage (VGS(th)) | [DATA_NEEDED: typical VGS(th)] | — |
| Gate Charge (Qg) | 3.3 nC typical | — |
| Power Dissipation (PD) at TA=25C | 540 mW | — |
| Gehäuse | Micro3 / SOT-23 (3-pin) | 6-PQFN (2x2) / DFN2020 with exposed pad |
| Montageart | Surface Mount | Surface Mount |
| Betriebstemperaturbereich | -55C to +150C (TJ) | — |
| Gate Drive Level | Logic-level (driven from 3.3V / 5V) | Logic-level (4.5V); 2.5V-capable |
| MSL-Level | 1 | — |
| RoHS Compliance | Compliant, Halogen-Free | — |
| FET Type | — | N-Channel |
| Drain-to-Source Voltage (VDS) | — | 20 V |
| Gate-to-Source Voltage (VGS) | — | ±12 V |
| Continuous Drain Current (TA) | — | 10 A |
| Continuous Drain Current (TC) | — | 12 A |
| On-Resistance RDS(on) max @ VGS=4.5V | — | 11.7 mΩ |
| Total Gate Charge (Qg) | — | 14 nC |
| Power Dissipation (TA) | — | 1.98 W |
| Power Dissipation (TC) | — | 9.6 W |
| Betriebstemperatur | — | -55°C to +150°C |
| Qualification | — | JEDEC standard |