IRLML6246TRPBF vs IRLML2030TRPBF Vergleich
Detaillierter Direktvergleich von IRLML6246TRPBF von Infineon und IRLML2030TRPBF von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IRLML6246TRPBF | IRLML2030TRPBF |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,11 | $0,14 |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | Infineon Technologies |
| Part Number | IRLML6246TRPBF | IRLML2030TRPBF |
| Technology | IR MOSFET (HEXFET Power MOSFET) | HEXFET (IR MOSFET) |
| FET Type | N-Channel | N-Channel |
| Drain-to-Source Voltage (VDS) | 20 V | — |
| Continuous Drain Current (ID) at Ta=25C | 4.1 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM pulsed value] | — |
| On-Resistance RDS(on) max @ VGS=4.5V | 46 mOhm | 154 mOhm |
| On-Resistance RDS(on) max @ VGS=2.5V | [DATA_NEEDED: RDS(on) at 2.5V] | — |
| Gate Threshold Voltage VGS(th) typ | 1.1 V (logic-level) | — |
| Gate Charge Qg typ | [DATA_NEEDED: Qg total gate charge] | — |
| Power Dissipation (Ta=25C) | 1.3 W | — |
| Betriebstemperaturbereich | -55C to +150C (junction) | — |
| Gehäuse | SOT-23 (Micro3) | Micro3 (SOT-23) |
| Montageart | Surface Mount | Surface Mount |
| RoHS Compliance | Yes (Pb-free) | Yes (lead-free, halogen-free) |
| Halogenfrei | Yes | — |
| MSL-Level | MSL1 (per JEDEC J-STD-020) | MSL 1 |
| Drain-Source Voltage (VDS) | — | 30 V |
| Continuous Drain Current (ID) at Ta | — | 2.7 A |
| Power Dissipation (PD) at Ta | — | 1.3 W |
| On-Resistance RDS(on) max @ VGS=10V | — | 100 mOhm |
| Gate-Source Voltage (VGS) max | — | +/-20 V |
| Gate Charge (Qg) typ | — | 1.0 nC |
| Betriebstemperatur | — | -55C to +150C (junction) |
| Qualification | — | JEDEC standard |
| Soldering | — | Wave-solder compatible |