IRLML6246TRPBF vs IRLML2030TRPBF Comparison
Detailed side-by-side comparison of IRLML6246TRPBF by Infineon and IRLML2030TRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IRLML6246TRPBF | IRLML2030TRPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.11 | $0.14 |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | Infineon Technologies |
| Part Number | IRLML6246TRPBF | IRLML2030TRPBF |
| Technology | IR MOSFET (HEXFET Power MOSFET) | HEXFET (IR MOSFET) |
| FET Type | N-Channel | N-Channel |
| Drain-to-Source Voltage (VDS) | 20 V | β |
| Continuous Drain Current (ID) at Ta=25C | 4.1 A | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM pulsed value] | β |
| On-Resistance RDS(on) max @ VGS=4.5V | 46 mOhm | 154 mOhm |
| On-Resistance RDS(on) max @ VGS=2.5V | [DATA_NEEDED: RDS(on) at 2.5V] | β |
| Gate Threshold Voltage VGS(th) typ | 1.1 V (logic-level) | β |
| Gate Charge Qg typ | [DATA_NEEDED: Qg total gate charge] | β |
| Power Dissipation (Ta=25C) | 1.3 W | β |
| Operating Temperature Range | -55C to +150C (junction) | β |
| Package | SOT-23 (Micro3) | Micro3 (SOT-23) |
| Mounting Type | Surface Mount | Surface Mount |
| RoHS Compliance | Yes (Pb-free) | Yes (lead-free, halogen-free) |
| Halogen-Free | Yes | β |
| MSL Level | MSL1 (per JEDEC J-STD-020) | MSL 1 |
| Drain-Source Voltage (VDS) | β | 30 V |
| Continuous Drain Current (ID) at Ta | β | 2.7 A |
| Power Dissipation (PD) at Ta | β | 1.3 W |
| On-Resistance RDS(on) max @ VGS=10V | β | 100 mOhm |
| Gate-Source Voltage (VGS) max | β | +/-20 V |
| Gate Charge (Qg) typ | β | 1.0 nC |
| Operating Temperature | β | -55C to +150C (junction) |
| Qualification | β | JEDEC standard |
| Soldering | β | Wave-solder compatible |